Inventor
HSIAO RU-SHANG
TW84 patents
⚠️ This page may combine multiple inventors who share the name “HSIAO RU-SHANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
48 patentsUS9252233B2Feb 2, 2016
Air-gap offset spacer in FinFET structure
TAIWAN SEMICONDUCTOR MFG CO LTD52 citations88
US9997633B2Jun 12, 2018
Semiconductor devices, FinFET devices and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations84
US9728637B2Aug 8, 2017
Mechanism for forming semiconductor device with gate
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9159812B1Oct 13, 2015
Fin sidewall removal to enlarge epitaxial source/drain volume
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations82
US11949000B2Apr 2, 2024
Metal gate structures and methods of fabricating the same in field-effect transistors
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations74
US12021130B2Jun 25, 2024
Circuit structure with gate configuration
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11961731B2Apr 16, 2024
Method and structure for semiconductor interconnect
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11588038B2Feb 21, 2023
Circuit structure with gate configuration
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10847636B2Nov 24, 2020
Methods for forming semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10680103B2Jun 9, 2020
Method of forming semiconductor device with gate
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10510877B2Dec 17, 2019
Semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10062603B2Aug 28, 2018
Air-gap scheme for BEOL process
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9985122B2May 29, 2018
Semiconductor structures
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9842932B1Dec 12, 2017
FinFET with P/N stacked fins and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9634122B2Apr 25, 2017
Device boost by quasi-FinFET
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9449811B2Sep 20, 2016
Air-gap scheme for BEOL process
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9281215B2Mar 8, 2016
Mechanism for forming gate
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US12119265B2Oct 15, 2024
High voltage devices
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11699702B2Jul 11, 2023
Input/output devices
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US10056455B1Aug 21, 2018
Semiconductor device and method of fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US9570561B2Feb 14, 2017
Modified channel position to suppress hot carrier injection in FinFETs
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations72
US9543399B2Jan 10, 2017
Device having sloped gate profile and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US9209304B2Dec 8, 2015
N/P MOS FinFET performance enhancement by specific orientation surface
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US12027609B2Jul 2, 2024
Gate structure of semiconductor device and method of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US11450758B2Sep 20, 2022
Gate structure of semiconductor device and method of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US10008501B2Jun 26, 2018
Sandwich EPI channel for device enhancement
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US9558955B2Jan 31, 2017
Formation method of semiconductor device that includes performing hydrogen-containing plasma treatment on metal gate stack
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US9466670B2Oct 11, 2016
Sandwich epi channel for device enhancement
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations71
US12283595B2Apr 22, 2025
Integration of multiple transistors having fin and mesa structures
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US12224213B2Feb 11, 2025
High voltage device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US11658230B2May 23, 2023
Method for forming a semiconductor structure including plasma cleaning operations
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11271102B2Mar 8, 2022
Semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11232943B2Jan 25, 2022
Method and structure for semiconductor interconnect
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12588223B2Mar 24, 2026
FinFET MOS capacitor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12568676B2Mar 3, 2026
High voltage devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12507429B2Dec 23, 2025
Metal gate structures and methods of fabricating the same in field-effect transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12477841B2Nov 18, 2025
Semiconductor image-sensing structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12464801B2Nov 4, 2025
Circuit structure with gate configuration
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12389625B2Aug 12, 2025
Semiconductor device with gate
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12199193B2Jan 14, 2025
FinFET MOS capacitor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12159921B2Dec 3, 2024
Semiconductor device and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12113120B2Oct 8, 2024
Gate electrode having a work-function layer including materials with different average grain sizes
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12094874B2Sep 17, 2024
Semiconductor devices and methods of manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11855175B2Dec 26, 2023
Fabrication of long gate devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11600727B2Mar 7, 2023
Method of forming semiconductor device with gate
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11502185B2Nov 15, 2022
Methods of manufacturing a gate electrode having metal layers with different average grain sizes
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11476351B2Oct 18, 2022
Metal gate structures and methods of fabricating the same in field-effect transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11469335B2Oct 11, 2022
FinFET MOS capacitor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
TAIWAN SEMICONDUCTOR MFG
2 patentsShowing the top 50 of 84 patents by PatentIndex Score.