Inventor

TSUNASHIMA YOSHITAKA

JP79 patents

⚠️ This page may combine multiple inventors who share the name “TSUNASHIMA YOSHITAKA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TSUNASHIMA YOSHITAKA

TOSHIBA KK

Semiconductor device and method of manufacturing the same

Semiconductor device and method of manufacturing the same

Chip for multi-chip semiconductor device and method of manufacturing the same

Semiconductor substrate having pillars within a closed empty space

Semiconductor device and method for manufacturing the same

Semiconductor device and method of manufacturing the same

Method of manufacturing a semiconductor device

Semiconductor apparatus having elevated source and drain structure and manufacturing method therefor

Method of making empty space in silicon

Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereof

Method of manufacturing a multi-chip semiconductor device effective to improve alignment

Semiconductor device and method of manufacturing the same

Semiconductor device with gate insulator formed of high dielectric film

Method of deforming a trench by a thermal treatment

Semiconductor wafer support apparatus and method

Liquid source container device

Semiconductor device and its fabricating method

Field effect transistor having elevated source and drain regions and methods for manufacturing the same

Deep trench filling method using silicon film deposition and silicon migration

Semiconductor device and its fabricating method

Method for fabricating a localize SOI in bulk silicon substrate including changing first trenches formed in the substrate into unclosed empty space by applying heat treatment

Semiconductor device and method of manufacturing the same

Semiconductor device and method for manufacturing semiconductor device

Semiconductor device comprising dual silicon nitride layers with varying nitrogen ratio

Method of manufacturing semiconductor device and the semiconductor device

Semiconductor device and manufacturing method thereof

Semiconductor device including an interface layer containing chlorine

Semiconductor apparatus having elevated source and drain structure and manufacturing method therefor

Semiconductor device and method of manufacturing the same

Evaporator for liquid raw material and evaporation method therefor

Method of manufacturing an insulated-gate field-effect transistor

Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereof

Semiconductor device and method of manufacturing the same

Semiconductor device and semiconductor device manufacturing method

Field effect transistor having elevated source and drain regions and methods of manufacturing the same

Semiconductor device and its fabricating method

Smooth surface doped silicon film formation

Method of manufacturing a semiconductor apparatus

Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereof

Method of manufacturing a semiconductor device using an oxidation process

Semiconductor device and method of manufacturing the same including a dual layer raised source and drain

Method of fabricating semiconductor device

Semiconductor device and its fabricating method

Semiconductor device and method of manufacturing the same

Semiconductor device

Semiconductor device and method of manufacturing the same

Semiconductor device and method of manufacturing the same

Semiconductor device and method of manufacturing the same

Method of manufacturing semiconductor device and the semiconductor device

TOKYO ELECTRON LTD

MOCVD method of tantalum oxide film