Inventor
PLOOG KLAUS
DE15 patents
Patents
15 patentsUS5373186ADec 13, 1994
Bipolar transistor with monoatomic base layer between emitter and collector layers
MAX PLANCK GESELLSCHAFT111 citations97
US4882609ANov 21, 1989
Semiconductor devices with at least one monoatomic layer of doping atoms
MAX PLANCK GESELLSCHAFT180 citations97
US4775881AOct 4, 1988
Semiconductor device for detecting electromagnetic radiation or particles
MAX PLANCK GESELLSCHAFT54 citations91
US5714765AFeb 3, 1998
Method of fabricating a compositional semiconductor device
MAX PLANCK GESELLSCHAFT43 citations86
US5385865AJan 31, 1995
Method of generating active semiconductor structures by means of starting structures which have a 2D charge carrier layer parallel to the surface
MAX PLANCK GESELLSCHAFT27 citations86
US5060234AOct 22, 1991
Injection laser with at least one pair of monoatomic layers of doping atoms
MAX PLANCK GESELLSCHAFT17 citations80
US5329150AJul 12, 1994
Semiconductor photodetector devices with pairs of monoatomic layers separated by intrinsic layers
MAX PLANCK GESELLSCHAFT13 citations72
US5216260AJun 1, 1993
Optically bistable semiconductor device with pairs of monoatomic layers separated by intrinsic layers
MAX PLANCK GESELLSCHAFT8 citations72
US5057881AOct 15, 1991
Light emitting compositional semiconductor device
MAX PLANCK GESELLSCHAFT19 citations71
US4755857AJul 5, 1988
Heterostructure semiconductor device
MAX PLANCK GESELLSCHAFT8 citations71
US5396089AMar 7, 1995
Method of generating active semiconductor structures by means of starting structures which have a 2D charge carrier layer parallel to the surface
MAX PLANCK GESELLSCHAFT15 citations69
US4732648AMar 22, 1988
Method of preparing semiconductor substrates
MAX PLANCK GESELLSCHAFT10 citations68
US4740978AApr 26, 1988
Integrated quantum well lasers having uniform thickness lasing regions for wavelength multiplexing
MAX PLANCK GESELLSCHAFT13 citations67
US5148242ASep 15, 1992
Electron-wave coupled semiconductor switching device
MAX PLANCK GESELLSCHAFT11 citations66
US5338692AAug 16, 1994
Method of generating active semiconductor structures by means of starting structures which have a 2D charge carrier layer parallel to the surface
MAX PLANCK GESELLSCHAFT3 citations58