Inventor
ROUSE GEORGE V
US25 patents
⚠️ This page may combine multiple inventors who share the name “ROUSE GEORGE V”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HARRIS CORP
17 patentsUS5849627ADec 15, 1998
Bonded wafer processing with oxidative bonding
HARRIS CORP178 citations99
US5569620AOct 29, 1996
Bonded wafer processing with metal silicidation
HARRIS CORP194 citations99
US5387555AFeb 7, 1995
Bonded wafer processing with metal silicidation
HARRIS CORP149 citations99
US5034343AJul 23, 1991
Manufacturing ultra-thin wafer using a handle wafer
HARRIS CORP171 citations97
US5744852AApr 28, 1998
Bonded wafer
HARRIS CORP68 citations96
US5517047AMay 14, 1996
Bonded wafer processing
HARRIS CORP53 citations96
US5362667ANov 8, 1994
Bonded wafer processing
HARRIS CORP93 citations96
US5240876AAug 31, 1993
Method of fabricating SOI wafer with SiGe as an etchback film in a BESOI process
HARRIS CORP90 citations96
US5218213AJun 8, 1993
SOI wafer with sige
HARRIS CORP83 citations96
US5091331AFeb 25, 1992
Ultra-thin circuit fabrication by controlled wafer debonding
HARRIS CORP84 citations95
US5603779AFeb 18, 1997
Bonded wafer and method of fabrication thereof
HARRIS CORP35 citations92
US4968628ANov 6, 1990
Method of fabricating back diffused bonded oxide substrates
HARRIS CORP28 citations92
US5266135ANov 30, 1993
Wafer bonding process employing liquid oxidant
HARRIS CORP29 citations91
US5081061AJan 14, 1992
Manufacturing ultra-thin dielectrically isolated wafers
HARRIS CORP38 citations91
US4851078AJul 25, 1989
Dielectric isolation process using double wafer bonding
HARRIS CORP52 citations91
US5932022AAug 3, 1999
SC-2 based pre-thermal treatment wafer cleaning process
HARRIS CORP51 citations85
US5334273AAug 2, 1994
Wafer bonding using trapped oxidizing vapor
HARRIS CORP17 citations80
INTERSIL CORP
4 patentsUS6255195B1Jul 3, 2001
Method for forming a bonded substrate containing a planar intrinsic gettering zone and substrate formed by said method
INTERSIL CORP66 citations95
US6909146B1Jun 21, 2005
Bonded wafer with metal silicidation
INTERSIL CORP25 citations92
US6246090B1Jun 12, 2001
Power trench transistor device source region formation using silicon spacer
INTERSIL CORP43 citations92
US6812108B2Nov 2, 2004
BICMOS process with low temperature coefficient resistor (TCRL)
INTERSIL CORP9 citations71
INTERSIL INC
3 patentsUS6798024B1Sep 28, 2004
BiCMOS process with low temperature coefficient resistor (TCRL)
INTERSIL INC25 citations89
US7052973B2May 30, 2006
Bonded substrate for an integrated circuit containing a planar intrinsic gettering zone
INTERSIL INC5 citations72
US6825532B2Nov 30, 2004
Bonded substrate for an integrated circuit containing a planar intrinsic gettering zone
INTERSIL INC12 citations72