P

Inventor

NIWA MITSUYUKI

JP17 patents

Patents

17 patents
US5244509ASep 14, 1993

Substrate having an uneven surface for solar cell and a solar cell provided with said substrate

CANON KK116 citations98
US5578501ANov 26, 1996

Method of manufacturing a solar cell by formation of a zinc oxide transparent conductive layer

CANON KK38 citations96
US5420043AMay 30, 1995

Method of manufacturing a solar cell

CANON KK45 citations96
US5324365AJun 28, 1994

Solar cell

CANON KK60 citations96
US5527396AJun 18, 1996

Deposited film forming apparatus

CANON KK46 citations95
US5417770AMay 23, 1995

Photovoltaic device and a forming method thereof

CANON KK61 citations95
US5429685AJul 4, 1995

Photoelectric conversion element and power generation system using the same

CANON KK34 citations92
US5371380ADec 6, 1994

Si- and/or Ge-containing non-single crystalline semiconductor film with an average radius of 3.5 A or less as for microvoids contained therein and a microvoid density 1×10.sup.(19) (cm-3) or less

CANON KK23 citations92
US5352300AOct 4, 1994

Solar cell

CANON KK39 citations92
US5284525AFeb 8, 1994

Solar cell

CANON KK21 citations92
US5281541AJan 25, 1994

Method for repairing an electrically short-circuited semiconductor device, and process for producing a semiconductor device utilizing said method

CANON KK23 citations92
US5418680AMay 23, 1995

Apparatus for repairing an electrically short-circuited semiconductor device

CANON KK16 citations82
US5573601ANov 12, 1996

Pin amorphous silicon photovoltaic element with counter-doped intermediate layer

CANON KK17 citations74
US5563425AOct 8, 1996

Photoelectrical conversion device and generating system using the same

CANON KK12 citations74
US5563075AOct 8, 1996

Forming a non-monocrystalline silicone semiconductor having pin junction including laminated intrinsic layers

CANON KK15 citations74
US5236798AAug 17, 1993

Electrophotographic light receiving member having a photoconductive layer formed of non-single crystal silicon material and a surface layer containing polysilane compound

CANON KK5 citations63
US5019887AMay 28, 1991

Non-single crystalline photosensor with hydrogen and halogen

CANON KK6 citations63