Inventor
CHEN HUNG-MING
TW81 patents
⚠️ This page may combine multiple inventors who share the name “CHEN HUNG-MING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
11 patentsUS8686516B2Apr 1, 2014
Silicide formation and associated devices
TAIWAN SEMICONDUCTOR MFG367 citations99
US9112052B2Aug 18, 2015
Voids in STI regions for forming bulk FinFETs
TAIWAN SEMICONDUCTOR MFG10 citations84
US8846466B2Sep 30, 2014
Forming inter-device STI regions and intra-device STI regions using different dielectric materials
TAIWAN SEMICONDUCTOR MFG5 citations84
US8723271B2May 13, 2014
Voids in STI regions for forming bulk FinFETs
TAIWAN SEMICONDUCTOR MFG12 citations84
US8008157B2Aug 30, 2011
CMOS device with raised source and drain regions
TAIWAN SEMICONDUCTOR MFG8 citations84
US7545006B2Jun 9, 2009
CMOS devices with graded silicide regions
TAIWAN SEMICONDUCTOR MFG10 citations84
US9379215B2Jun 28, 2016
Fin field effect transistor
TAIWAN SEMICONDUCTOR MFG4 citations83
US9209300B2Dec 8, 2015
Fin field effect transistor
TAIWAN SEMICONDUCTOR MFG8 citations83
US8809940B2Aug 19, 2014
Fin held effect transistor
TAIWAN SEMICONDUCTOR MFG8 citations83
US6972258B2Dec 6, 2005
Method for selectively controlling damascene CD bias
TAIWAN SEMICONDUCTOR MFG19 citations82
US8623721B2Jan 7, 2014
Silicide formation and associated devices
TAIWAN SEMICONDUCTOR MFG2 citations63
TAIWAN SEMICONDUCTOR MFG CO LTD
11 patentsUS9741829B2Aug 22, 2017
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9716091B2Jul 25, 2017
Fin field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations83
US10340366B2Jul 2, 2019
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US9876117B2Jan 23, 2018
Structure and formation method of semiconductor device structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10509883B2Dec 17, 2019
Method for layout generation with constrained hypergraph partitioning
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations69
US12349382B2Jul 1, 2025
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11855187B2Dec 26, 2023
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11158725B2Oct 26, 2021
Fin structure of fin field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11145750B2Oct 12, 2021
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11776911B2Oct 3, 2023
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11024582B2Jun 1, 2021
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
MILLERKNOLL INC
5 patentsYUAN FENG
3 patentsUS9953885B2Apr 24, 2018
STI shape near fin bottom of Si fin in bulk FinFET
YUAN FENG24 citations94
US8519481B2Aug 27, 2013
Voids in STI regions for forming bulk FinFETs
YUAN FENG35 citations94
US8592918B2Nov 26, 2013
Forming inter-device STI regions and intra-device STI regions using different dielectric materials
YUAN FENG8 citations84
(unassigned)
3 patentsTATUNG CO LTD
2 patentsBENQ CORP
2 patentsCHEN HUNG-MING
2 patentsMENU AS
2 patentsLIN HUNG-TA
1 patentJOINSOON ELECTRONICS MFG CO LT
1 patentCHEN KUAN-NENG
1 patentCHEN TUNG-CHIEH
1 patentINST INFORMATION IND
1 patentNETSKOPE INC
1 patentLIANG CHUN SHENG
1 patentADVANCED CONNECTEK INC
1 patentHEWLETT PACKARD DEVELOPMENT CO
1 patentShowing the top 50 of 81 patents by PatentIndex Score.