Inventor
YU CHEN-HUA D
US22 patents
⚠️ This page may combine multiple inventors who share the name “YU CHEN-HUA D”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
AT & T BELL LAB
8 patentsUS5366557ANov 22, 1994
Method and apparatus for forming integrated circuit layers
AT & T BELL LAB55 citations96
US5302555AApr 12, 1994
Anisotropic deposition of dielectrics
AT & T BELL LAB28 citations92
US5281557AJan 25, 1994
Soluble oxides for integrated circuit fabrication formed by the incomplete dissociation of the precursor gas
AT & T BELL LAB22 citations92
US5278096AJan 11, 1994
Transistor fabrication method
AT & T BELL LAB21 citations92
US5246887ASep 21, 1993
Dielectric deposition
AT & T BELL LAB38 citations92
US5212116AMay 18, 1993
Method for forming planarized films by preferential etching of the center of a wafer
AT & T BELL LAB40 citations92
US5215930AJun 1, 1993
Integrated circuit etching of silicon nitride and polysilicon using phosphoric acid
AT & T BELL LAB16 citations74
US5068207ANov 26, 1991
Method for producing a planar surface in integrated circuit manufacturing
AT & T BELL LAB15 citations73
AT & T CORP
8 patentsUS5468669ANov 21, 1995
Integrated circuit fabrication
AT & T CORP22 citations92
US5451435ASep 19, 1995
Method for forming dielectric
AT & T CORP25 citations92
US5431770AJul 11, 1995
Transistor gate formation
AT & T CORP33 citations92
US5418173AMay 23, 1995
Method of reducing ionic contamination in integrated circuit fabrication
AT & T CORP10 citations74
US5399532AMar 21, 1995
Integrated circuit window etch and planarization
AT & T CORP9 citations74
US5395799AMar 7, 1995
Method of fabricating semiconductor devices having electrodes comprising layers of doped tungsten disilicide
AT & T CORP7 citations74
US5411899AMay 2, 1995
Transistor fabrication of a twin tub using angled implant
AT & T CORP6 citations63
US5416033AMay 16, 1995
Integrated circuit and manufacture
AT & T CORP6 citations58
TAIWAN SEMICONDUCTOR MFG
3 patentsUS5552344ASep 3, 1996
Non-etchback self-aligned via size reduction method employing ozone assisted chemical vapor deposited silicon oxide
TAIWAN SEMICONDUCTOR MFG24 citations92
US6187664B1Feb 13, 2001
Method for forming a barrier metallization layer
TAIWAN SEMICONDUCTOR MFG11 citations74
US5904573AMay 18, 1999
PE-TEOS process
TAIWAN SEMICONDUCTOR MFG5 citations63