Inventor
LIN JIUNN-JYI
TW8 patents
Patents
8 patentsUS5252515AOct 12, 1993
Method for field inversion free multiple layer metallurgy VLSI processing
TAIWAN SEMICONDUCTOR MFG61 citations94
US5334554AAug 2, 1994
Nitrogen plasma treatment to prevent field device leakage in VLSI processing
TAIWAN SEMICONDUCTOR MFG69 citations92
US5629237AMay 13, 1997
Taper etching without re-entrance profile
TAIWAN SEMICONDUCTOR MFG53 citations89
US5286667AFeb 15, 1994
Modified and robust self-aligning contact process
TAIWAN SEMICONDUCTOR MFG44 citations89
US7015129B2Mar 21, 2006
Bond pad scheme for Cu process
TAIWAN SEMICONDUCTOR MFG7 citations73
US5461254AOct 24, 1995
Method and resulting device for field inversion free multiple layer metallurgy VLSI processing
TAIWAN SEMICONDUCTOR MFG14 citations72
US5248384ASep 28, 1993
Rapid thermal treatment to eliminate metal void formation in VLSI manufacturing process
TAIWAN SEMICONDUCTOR MFG14 citations69
US6844626B2Jan 18, 2005
Bond pad scheme for Cu process
TAIWAN SEMICONDUCTOR MFG3 citations62