Inventor
TOMIKAWA TADASHI
JP25 patents
⚠️ This page may combine multiple inventors who share the name “TOMIKAWA TADASHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SUMITOMO ELECTRIC INDUSTRIES
22 patentsUS5382809AJan 17, 1995
Semiconductor device including semiconductor diamond
SUMITOMO ELECTRIC INDUSTRIES54 citations96
US5117267AMay 26, 1992
Semiconductor heterojunction structure
SUMITOMO ELECTRIC INDUSTRIES56 citations96
US5144380ASep 1, 1992
Diamond semiconductor device with a non-doped diamond thin film between a diamond active layer and a substrate
SUMITOMO ELECTRIC INDUSTRIES42 citations95
US5316804AMay 31, 1994
Process for the synthesis of hard boron nitride
SUMITOMO ELECTRIC INDUSTRIES96 citations94
US7108519B2Sep 19, 2006
Electrical connection box
SUMITOMO ELECTRIC INDUSTRIES22 citations92
US5844252ADec 1, 1998
Field emission devices having diamond field emitter, methods for making same, and methods for fabricating porous diamond
SUMITOMO ELECTRIC INDUSTRIES49 citations92
US5600156AFeb 4, 1997
Diamond semiconductor device with P-I-N type multilayer structure
SUMITOMO ELECTRIC INDUSTRIES23 citations92
US5552613ASep 3, 1996
Electron device
SUMITOMO ELECTRIC INDUSTRIES22 citations92
US5250149AOct 5, 1993
Method of growing thin film
SUMITOMO ELECTRIC INDUSTRIES31 citations92
US5210431AMay 11, 1993
Ohmic connection electrodes for p-type semiconductor diamonds
SUMITOMO ELECTRIC INDUSTRIES27 citations91
US7189082B2Mar 13, 2007
Electrical connection box
SUMITOMO ELECTRIC INDUSTRIES23 citations89
US6060771AMay 9, 2000
Connecting lead for semiconductor devices and method for fabricating the lead
SUMITOMO ELECTRIC INDUSTRIES16 citations84
US7233495B2Jun 19, 2007
Circuit configuration member and method of fabricating the same
SUMITOMO ELECTRIC INDUSTRIES11 citations83
US5476812ADec 19, 1995
Semiconductor heterojunction structure
SUMITOMO ELECTRIC INDUSTRIES16 citations82
US5422500AJun 6, 1995
Ohmic contact electrodes for N-type semiconductor cubic boron nitride
SUMITOMO ELECTRIC INDUSTRIES14 citations81
US5075757ADec 24, 1991
Ohmic contact electrodes for semiconductor diamonds
SUMITOMO ELECTRIC INDUSTRIES19 citations80
US5668382ASep 16, 1997
Ohmic electrode and method for forming it
SUMITOMO ELECTRIC INDUSTRIES12 citations74
US5527735AJun 18, 1996
Ohmic electrode of n-type semiconductor cubic boron nitride and method of producing same
SUMITOMO ELECTRIC INDUSTRIES6 citations74
US5306928AApr 26, 1994
Diamond semiconductor device having a non-doped diamond layer formed between a BN substrate and an active diamond layer
SUMITOMO ELECTRIC INDUSTRIES13 citations73
US5285109AFeb 8, 1994
Ohmic contact electrodes for n-type semiconductor cubic boron nitride
SUMITOMO ELECTRIC INDUSTRIES5 citations73
US6618539B2Sep 9, 2003
Heater module and optical waveguide module
SUMITOMO ELECTRIC INDUSTRIES4 citations62
US5298461AMar 29, 1994
Method of forming ohmic contact electrodes for n-type semiconductor cubic boron nitride
SUMITOMO ELECTRIC INDUSTRIES2 citations62
AUTONETWORKS TECHNOLOGIES LTD
3 patentsUS7632110B2Dec 15, 2009
Electric junction box
AUTONETWORKS TECHNOLOGIES LTD29 citations92
US7877868B2Feb 1, 2011
Method of fabricating circuit configuration member
AUTONETWORKS TECHNOLOGIES LTD8 citations83
US8356762B2Jan 22, 2013
Mounting structure of on-vehicle circuit unit and on-vehicle circuit unit
AUTONETWORKS TECHNOLOGIES LTD14 citations79