P

Inventor

TOMIKAWA TADASHI

JP25 patents
⚠️ This page may combine multiple inventors who share the name “TOMIKAWA TADASHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SUMITOMO ELECTRIC INDUSTRIES

22 patents
US5382809AJan 17, 1995

Semiconductor device including semiconductor diamond

SUMITOMO ELECTRIC INDUSTRIES54 citations96
US5117267AMay 26, 1992

Semiconductor heterojunction structure

SUMITOMO ELECTRIC INDUSTRIES56 citations96
US5144380ASep 1, 1992

Diamond semiconductor device with a non-doped diamond thin film between a diamond active layer and a substrate

SUMITOMO ELECTRIC INDUSTRIES42 citations95
US5316804AMay 31, 1994

Process for the synthesis of hard boron nitride

SUMITOMO ELECTRIC INDUSTRIES96 citations94
US7108519B2Sep 19, 2006

Electrical connection box

SUMITOMO ELECTRIC INDUSTRIES22 citations92
US5844252ADec 1, 1998

Field emission devices having diamond field emitter, methods for making same, and methods for fabricating porous diamond

SUMITOMO ELECTRIC INDUSTRIES49 citations92
US5600156AFeb 4, 1997

Diamond semiconductor device with P-I-N type multilayer structure

SUMITOMO ELECTRIC INDUSTRIES23 citations92
US5552613ASep 3, 1996

Electron device

SUMITOMO ELECTRIC INDUSTRIES22 citations92
US5250149AOct 5, 1993

Method of growing thin film

SUMITOMO ELECTRIC INDUSTRIES31 citations92
US5210431AMay 11, 1993

Ohmic connection electrodes for p-type semiconductor diamonds

SUMITOMO ELECTRIC INDUSTRIES27 citations91
US7189082B2Mar 13, 2007

Electrical connection box

SUMITOMO ELECTRIC INDUSTRIES23 citations89
US6060771AMay 9, 2000

Connecting lead for semiconductor devices and method for fabricating the lead

SUMITOMO ELECTRIC INDUSTRIES16 citations84
US7233495B2Jun 19, 2007

Circuit configuration member and method of fabricating the same

SUMITOMO ELECTRIC INDUSTRIES11 citations83
US5476812ADec 19, 1995

Semiconductor heterojunction structure

SUMITOMO ELECTRIC INDUSTRIES16 citations82
US5422500AJun 6, 1995

Ohmic contact electrodes for N-type semiconductor cubic boron nitride

SUMITOMO ELECTRIC INDUSTRIES14 citations81
US5075757ADec 24, 1991

Ohmic contact electrodes for semiconductor diamonds

SUMITOMO ELECTRIC INDUSTRIES19 citations80
US5668382ASep 16, 1997

Ohmic electrode and method for forming it

SUMITOMO ELECTRIC INDUSTRIES12 citations74
US5527735AJun 18, 1996

Ohmic electrode of n-type semiconductor cubic boron nitride and method of producing same

SUMITOMO ELECTRIC INDUSTRIES6 citations74
US5306928AApr 26, 1994

Diamond semiconductor device having a non-doped diamond layer formed between a BN substrate and an active diamond layer

SUMITOMO ELECTRIC INDUSTRIES13 citations73
US5285109AFeb 8, 1994

Ohmic contact electrodes for n-type semiconductor cubic boron nitride

SUMITOMO ELECTRIC INDUSTRIES5 citations73
US6618539B2Sep 9, 2003

Heater module and optical waveguide module

SUMITOMO ELECTRIC INDUSTRIES4 citations62
US5298461AMar 29, 1994

Method of forming ohmic contact electrodes for n-type semiconductor cubic boron nitride

SUMITOMO ELECTRIC INDUSTRIES2 citations62

AUTONETWORKS TECHNOLOGIES LTD

3 patents