Inventor
PARK KYOUNG-WAN
KR27 patents
⚠️ This page may combine multiple inventors who share the name “PARK KYOUNG-WAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
KOREA ELECTRONICS TELECOMM
18 patentsUS6770534B2Aug 3, 2004
Ultra small size vertical MOSFET device and method for the manufacture thereof
KOREA ELECTRONICS TELECOMM64 citations95
US6723587B2Apr 20, 2004
Ultra small-sized SOI MOSFET and method of fabricating the same
KOREA ELECTRONICS TELECOMM24 citations92
US5883419AMar 16, 1999
Ultra-thin MO-C film transistor
KOREA ELECTRONICS TELECOMM40 citations92
US5872372AFeb 16, 1999
Thin film transistor with piezoelectric film
KOREA ELECTRONICS TELECOMM28 citations92
US5760675AJun 2, 1998
Piezoresistive device and fabrication method thereof
KOREA ELECTRONICS TELECOMM24 citations92
US6638823B2Oct 28, 2003
Ultra small size vertical MOSFET device and method for the manufacture thereof
KOREA ELECTRONICS TELECOMM38 citations91
US6242326B1Jun 5, 2001
Method for fabricating compound semiconductor substrate having quantum dot array structure
KOREA ELECTRONICS TELECOMM35 citations90
US6323504B1Nov 27, 2001
Single-electron memory device using an electron-hole coulomb blockade
KOREA ELECTRONICS TELECOMM17 citations84
US5880484AMar 9, 1999
Lateral resonant tunneling transistor having two non-symmetric quantum dots
KOREA ELECTRONICS TELECOMM11 citations74
US6841082B2Jan 11, 2005
Method of manufacturing Er-doped silicon nano-dot array and laser ablation appparatus used therein
KOREA ELECTRONICS TELECOMM10 citations73
US6693294B1Feb 17, 2004
Schottky barrier tunnel transistor using thin silicon layer on insulator and method for fabricating the same
KOREA ELECTRONICS TELECOMM8 citations73
US6620668B2Sep 16, 2003
Method of fabricating MOS transistor having shallow source/drain junction regions
KOREA ELECTRONICS TELECOMM10 citations73
US6037198AMar 14, 2000
Method of fabricating SOI wafer
KOREA ELECTRONICS TELECOMM7 citations73
US5519232AMay 21, 1996
Quantum interference device
KOREA ELECTRONICS TELECOMM5 citations63
US6489587B2Dec 3, 2002
Fabrication method of erbium-doped silicon nano-size dots
KOREA ELECTRONICS TELECOMM2 citations62
US5994714ANov 30, 1999
Quantum diffraction transistor
KOREA ELECTRONICS TELECOMM0 citations52
US5940696AAug 17, 1999
Method of manufacturing a quantum diffraction transistor
KOREA ELECTRONICS TELECOMM0 citations52
US6797629B2Sep 28, 2004
Method of manufacturing nano transistors
KOREA ELECTRONICS TELECOMM0 citations41
LG CHEMICAL LTD
9 patentsUS12064742B2Aug 20, 2024
Apparatus and method for producing positive electrode active material precursor
LG CHEMICAL LTD0 citations62
US12327869B2Jun 10, 2025
Positive electrode active material precursor for lithium secondary battery, and method of preparing the same
LG CHEMICAL LTD0 citations60
US11973222B2Apr 30, 2024
Positive electrode active material precursor for lithium secondary battery, and method of preparing the same
LG CHEMICAL LTD0 citations60
US12427461B2Sep 30, 2025
Apparatus and method for cleaning metal filter
LG CHEMICAL LTD0 citations59
US12064720B2Aug 20, 2024
Apparatus and method for cleaning metal filter
LG CHEMICAL LTD0 citations59
US12119491B2Oct 15, 2024
Positive electrode active material precursor and preparation method of positive electrode active material precursor
LG CHEMICAL LTD0 citations50
US10710048B2Jul 14, 2020
Co-precipitation reactor
LG CHEMICAL LTD0 citations49
US11996538B2May 28, 2024
Method for preparing positive electrode active material precursor for lithium secondary battery
LG CHEMICAL LTD0 citations47
US12559388B2Feb 24, 2026
Method for preparing positive electrode active material precursor for lithium secondary battery
LG CHEMICAL LTD0 citations46