P

Inventor

KOJIMA MAKOTO

JP105 patents
⚠️ This page may combine multiple inventors who share the name “KOJIMA MAKOTO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD

20 patents
US7280409B2Oct 9, 2007

Non-volatile memory device with threshold voltage control function

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD80 citations97
US4839787AJun 13, 1989

Integrated high voltage generating system

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD87 citations95
US6603702B2Aug 5, 2003

Semiconductor integrated circuit

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD28 citations93
US6449201B1Sep 10, 2002

Semiconductor memory device having a hierarchical bit line architecture

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD28 citations93
US6400637B1Jun 4, 2002

Semiconductor memory device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD46 citations93
US6822907B2Nov 23, 2004

Nonvolatile semiconductor memory device and data readout method for the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD45 citations92
US6711088B2Mar 23, 2004

Semiconductor memory device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD29 citations92
US6496427B2Dec 17, 2002

Nonvolatile semiconductor memory device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD25 citations92
US6407946B2Jun 18, 2002

Nonvolatile semiconductor memory device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD46 citations92
US6188608B1Feb 13, 2001

Nonvolatile semiconductor memory device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD36 citations92
US6064188AMay 16, 2000

Internal step-down converter

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD21 citations92
US5901096AMay 4, 1999

Semiconductor memory device capable of disconnecting an internal booster power supply from a selected word line in response to a test signal and testing method therefor

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD29 citations89
US7123510B2Oct 17, 2006

Non-volatile semiconductor memory device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD16 citations84
US6756837B2Jun 29, 2004

Booster circuit

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD15 citations84
US6621744B2Sep 16, 2003

Readable semiconductor memory device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD19 citations84
US6272049B1Aug 7, 2001

Non-volatile semiconductor memory device having increased operating speed

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD17 citations84
US6069824AMay 30, 2000

Semiconductor memory device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD19 citations84
US6600336B2Jul 29, 2003

Signal transmission system

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD8 citations74
US6243301B1Jun 5, 2001

Semiconductor memory device and signal line switching circuit

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD12 citations74
US6229382B1May 8, 2001

MOS semiconductor integrated circuit having a current mirror

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD12 citations74

CANON KK

17 patents
US5381256AJan 10, 1995

Ferroelectric liquid crystal device with fine particles on insulator, having diameter less than substrate gap

CANON KK61 citations96
US5212575AMay 18, 1993

Functional substrate for controlling pixels

CANON KK67 citations96
US5734456AMar 31, 1998

Ferroelectric liquid crystal device and display having maximum peak of surface roughness of color filter of 0.1 micron or less

CANON KK28 citations93
US5666217ASep 9, 1997

Liquid crystal device

CANON KK19 citations93
US5650867AJul 22, 1997

Functional substrate for controlling pixels

CANON KK25 citations93
US5552911ASep 3, 1996

Color liquid crystal display device having varying cell thickness and varying pixel areas

CANON KK24 citations93
US5408246AApr 18, 1995

Electro-optical modulating apparatus and driving method thereof

CANON KK49 citations93
US4958912ASep 25, 1990

Image forming apparatus

CANON KK30 citations93
US6737287B1May 18, 2004

Ink used for ink jet, and methods for manufacturing conductive film, electron-emitting device, electron source and image-forming apparatus

CANON KK38 citations92
US5877836AMar 2, 1999

Liquid crystal device and process for production thereof

CANON KK26 citations92
US5835248ANov 10, 1998

Method of making ferroelectric liquid crystal device using particles to create an unevenness on alignment layer or underlying insulating layer

CANON KK17 citations92
US6992434B2Jan 31, 2006

Electron-emitting device having a fissure to increase electron emission efficiency

CANON KK11 citations84
US5831705ANov 3, 1998

Liquid crystal device

CANON KK16 citations82
US5815230ASep 29, 1998

Liquid crystal device and process for production thereof

CANON KK14 citations74
US5764327AJun 9, 1998

Ferroelectric liquid crystal device with uneven surface under alignment film and process for production

CANON KK6 citations74
US5714209AFeb 3, 1998

Liquid crystal device

CANON KK11 citations74
US5633740AMay 27, 1997

Chiral smectic liquid crystal device having at least one orientation film divided into regions with different uniaxial aligning treatment

CANON KK9 citations74

NITTO DENKO CORP

3 patents

HONDA MOTOR CO LTD

2 patents

MEMC ELECTRONIC MATERIALS

2 patents

MATSUSHITA ELECTRONICS CORP

2 patents

DAIKIN IND LTD

2 patents

PANASONIC CORP

1 patent

KOJIMA MAKOTO

1 patent

Showing the top 50 of 105 patents by PatentIndex Score.