Inventor
KOJIMA MAKOTO
JP105 patents
⚠️ This page may combine multiple inventors who share the name “KOJIMA MAKOTO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD
20 patentsUS7280409B2Oct 9, 2007
Non-volatile memory device with threshold voltage control function
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD80 citations97
US4839787AJun 13, 1989
Integrated high voltage generating system
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD87 citations95
US6603702B2Aug 5, 2003
Semiconductor integrated circuit
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD28 citations93
US6449201B1Sep 10, 2002
Semiconductor memory device having a hierarchical bit line architecture
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD28 citations93
US6400637B1Jun 4, 2002
Semiconductor memory device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD46 citations93
US6822907B2Nov 23, 2004
Nonvolatile semiconductor memory device and data readout method for the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD45 citations92
US6711088B2Mar 23, 2004
Semiconductor memory device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD29 citations92
US6496427B2Dec 17, 2002
Nonvolatile semiconductor memory device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD25 citations92
US6407946B2Jun 18, 2002
Nonvolatile semiconductor memory device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD46 citations92
US6188608B1Feb 13, 2001
Nonvolatile semiconductor memory device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD36 citations92
US6064188AMay 16, 2000
Internal step-down converter
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD21 citations92
US5901096AMay 4, 1999
Semiconductor memory device capable of disconnecting an internal booster power supply from a selected word line in response to a test signal and testing method therefor
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD29 citations89
US7123510B2Oct 17, 2006
Non-volatile semiconductor memory device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD16 citations84
US6756837B2Jun 29, 2004
Booster circuit
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD15 citations84
US6621744B2Sep 16, 2003
Readable semiconductor memory device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD19 citations84
US6272049B1Aug 7, 2001
Non-volatile semiconductor memory device having increased operating speed
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD17 citations84
US6069824AMay 30, 2000
Semiconductor memory device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD19 citations84
US6600336B2Jul 29, 2003
Signal transmission system
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD8 citations74
US6243301B1Jun 5, 2001
Semiconductor memory device and signal line switching circuit
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD12 citations74
US6229382B1May 8, 2001
MOS semiconductor integrated circuit having a current mirror
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD12 citations74
CANON KK
17 patentsUS5381256AJan 10, 1995
Ferroelectric liquid crystal device with fine particles on insulator, having diameter less than substrate gap
CANON KK61 citations96
US5212575AMay 18, 1993
Functional substrate for controlling pixels
CANON KK67 citations96
US5734456AMar 31, 1998
Ferroelectric liquid crystal device and display having maximum peak of surface roughness of color filter of 0.1 micron or less
CANON KK28 citations93
US5666217ASep 9, 1997
Liquid crystal device
CANON KK19 citations93
US5650867AJul 22, 1997
Functional substrate for controlling pixels
CANON KK25 citations93
US5552911ASep 3, 1996
Color liquid crystal display device having varying cell thickness and varying pixel areas
CANON KK24 citations93
US5408246AApr 18, 1995
Electro-optical modulating apparatus and driving method thereof
CANON KK49 citations93
US4958912ASep 25, 1990
Image forming apparatus
CANON KK30 citations93
US6737287B1May 18, 2004
Ink used for ink jet, and methods for manufacturing conductive film, electron-emitting device, electron source and image-forming apparatus
CANON KK38 citations92
US5877836AMar 2, 1999
Liquid crystal device and process for production thereof
CANON KK26 citations92
US5835248ANov 10, 1998
Method of making ferroelectric liquid crystal device using particles to create an unevenness on alignment layer or underlying insulating layer
CANON KK17 citations92
US6992434B2Jan 31, 2006
Electron-emitting device having a fissure to increase electron emission efficiency
CANON KK11 citations84
US5831705ANov 3, 1998
Liquid crystal device
CANON KK16 citations82
US5815230ASep 29, 1998
Liquid crystal device and process for production thereof
CANON KK14 citations74
US5764327AJun 9, 1998
Ferroelectric liquid crystal device with uneven surface under alignment film and process for production
CANON KK6 citations74
US5714209AFeb 3, 1998
Liquid crystal device
CANON KK11 citations74
US5633740AMay 27, 1997
Chiral smectic liquid crystal device having at least one orientation film divided into regions with different uniaxial aligning treatment
CANON KK9 citations74
NITTO DENKO CORP
3 patentsUS6218006B1Apr 17, 2001
Pressure-sensitive adhesive composition and pressure-sensitive adhesive sheets made therefrom, and sealants, reinforcing sheets and pressure-sensitive adhesive sheets for printing produced therefrom
NITTO DENKO CORP37 citations91
US5604035AFeb 18, 1997
Pressure-sensitive adhesive composition and pressure-sensitive adhesive sheets using the composition
NITTO DENKO CORP28 citations91
US6440553B2Aug 27, 2002
Printable pressure-sensitive adhesive sheet and sealing material containing same
NITTO DENKO CORP14 citations83
HONDA MOTOR CO LTD
2 patentsMEMC ELECTRONIC MATERIALS
2 patentsMATSUSHITA ELECTRONICS CORP
2 patentsDAIKIN IND LTD
2 patentsPANASONIC CORP
1 patentKOJIMA MAKOTO
1 patentShowing the top 50 of 105 patents by PatentIndex Score.