Inventor
SHINRIKI HIROSHI
JP48 patents
⚠️ This page may combine multiple inventors who share the name “SHINRIKI HIROSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOKYO ELECTRON LTD
23 patentsUS6143081ANov 7, 2000
Film forming apparatus and method, and film modifying apparatus and method
TOKYO ELECTRON LTD186 citations99
US6126753AOct 3, 2000
Single-substrate-processing CVD apparatus and method
TOKYO ELECTRON LTD180 citations99
US6800139B1Oct 5, 2004
Film deposition apparatus and method
TOKYO ELECTRON LTD146 citations98
US6756235B1Jun 29, 2004
Metal oxide film formation method and apparatus
TOKYO ELECTRON LTD219 citations98
US6232248B1May 15, 2001
Single-substrate-heat-processing method for performing reformation and crystallization
TOKYO ELECTRON LTD84 citations98
US6806211B2Oct 19, 2004
Device and method for processing substrate
TOKYO ELECTRON LTD108 citations96
US6467491B1Oct 22, 2002
Processing apparatus and processing method
TOKYO ELECTRON LTD97 citations96
US6428850B1Aug 6, 2002
Single-substrate-processing CVD method of forming film containing metal element
TOKYO ELECTRON LTD71 citations96
US7354622B2Apr 8, 2008
Method for forming thin film and apparatus for forming thin film
TOKYO ELECTRON LTD21 citations93
US7129185B2Oct 31, 2006
Substrate processing method and a computer readable storage medium storing a program for controlling same
TOKYO ELECTRON LTD36 citations92
US7037560B1May 2, 2006
Film forming method, and film modifying method
TOKYO ELECTRON LTD26 citations92
US6927112B2Aug 9, 2005
Radical processing of a sub-nanometer insulation film
TOKYO ELECTRON LTD27 citations92
US6485564B1Nov 26, 2002
Thin film forming method
TOKYO ELECTRON LTD24 citations92
US7481902B2Jan 27, 2009
Substrate processing apparatus and method, high speed rotary valve and cleaning method
TOKYO ELECTRON LTD16 citations84
US7383841B2Jun 10, 2008
Method of cleaning substrate-processing device and substrate-processing device
TOKYO ELECTRON LTD10 citations83
US6953731B2Oct 11, 2005
Fabrication process of a semiconductor device
TOKYO ELECTRON LTD14 citations83
US6866890B2Mar 15, 2005
Method of forming a dielectric film
TOKYO ELECTRON LTD18 citations83
US7125799B2Oct 24, 2006
Method and device for processing substrate, and apparatus for manufacturing semiconductor device
TOKYO ELECTRON LTD8 citations73
US7105101B2Sep 12, 2006
Method of removing oxide film on a substrate with hydrogen and fluorine radicals
TOKYO ELECTRON LTD2 citations63
US6866882B1Mar 15, 2005
Method of forming a thin film
TOKYO ELECTRON LTD6 citations63
US7497964B2Mar 3, 2009
Plasma igniting method and substrate processing method
TOKYO ELECTRON LTD4 citations62
US7378358B2May 27, 2008
Method for forming insulating film on substrate, method for manufacturing semiconductor device and substrate-processing apparatus
TOKYO ELECTRON LTD3 citations62
US7105362B2Sep 12, 2006
Method of forming dielectric film
TOKYO ELECTRON LTD6 citations62
KAWASAKI STEEL CO
10 patentsUS6001729ADec 14, 1999
Method of forming wiring structure for semiconductor device
KAWASAKI STEEL CO104 citations97
US6063703AMay 16, 2000
Method for making metal interconnection
KAWASAKI STEEL CO49 citations96
US5973402AOct 26, 1999
Metal interconnection and method for making
KAWASAKI STEEL CO48 citations96
US5834846ANov 10, 1998
Semiconductor device with contact structure and method of manufacturing the same
KAWASAKI STEEL CO61 citations96
US5627102AMay 6, 1997
Method for making metal interconnection with chlorine plasma etch
KAWASAKI STEEL CO89 citations96
US5679974AOct 21, 1997
Antifuse element and semiconductor device having antifuse elements
KAWASAKI STEEL CO20 citations92
US5652180AJul 29, 1997
Method of manufacturing semiconductor device with contact structure
KAWASAKI STEEL CO35 citations92
US5641985AJun 24, 1997
Antifuse element and semiconductor device having antifuse elements
KAWASAKI STEEL CO35 citations92
US5565702AOct 15, 1996
Antifuse element, semiconductor device having antifuse elements, and method for manufacturing the same
KAWASAKI STEEL CO41 citations92
US5521423AMay 28, 1996
Dielectric structure for anti-fuse programming element
KAWASAKI STEEL CO45 citations92
ASM JAPAN
6 patentsUS7408225B2Aug 5, 2008
Apparatus and method for forming thin film using upstream and downstream exhaust mechanisms
ASM JAPAN406 citations98
US7273526B2Sep 25, 2007
Thin-film deposition apparatus
ASM JAPAN90 citations98
US7435484B2Oct 14, 2008
Ruthenium thin film-formed structure
ASM JAPAN27 citations93
US7655564B2Feb 2, 2010
Method for forming Ta-Ru liner layer for Cu wiring
ASM JAPAN36 citations91
US7799674B2Sep 21, 2010
Ruthenium alloy film for copper interconnects
ASM JAPAN9 citations84
US7785658B2Aug 31, 2010
Method for forming metal wiring structure
ASM JAPAN7 citations74
HITACHI LTD
6 patentsUS5336638AAug 9, 1994
Process for manufacturing semiconductor devices
HITACHI LTD129 citations97
US4891684AJan 2, 1990
Semiconductor device
HITACHI LTD84 citations96
US5292673AMar 8, 1994
Method of manufacturing a semiconductor device
HITACHI LTD99 citations95
US5079191AJan 7, 1992
Process for producing a semiconductor device
HITACHI LTD39 citations92
US4937650AJun 26, 1990
Semiconductor capacitor device with dual dielectric
HITACHI LTD39 citations92
US4809052AFeb 28, 1989
Semiconductor memory device
HITACHI LTD7 citations73