Inventor
BRONNER GARY
US17 patents
⚠️ This page may combine multiple inventors who share the name “BRONNER GARY”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
12 patentsUS6388294B1May 14, 2002
Integrated circuit using damascene gate structure
IBM69 citations96
US6194301B1Feb 27, 2001
Method of fabricating an integrated circuit of logic and memory using damascene gate structure
IBM49 citations96
US6140208AOct 31, 2000
Shallow trench isolation (STI) with bilayer of oxide-nitride for VLSI applications
IBM72 citations95
US6548357B2Apr 15, 2003
Modified gate processing for optimized definition of array and logic devices on same chip
IBM28 citations92
US6426251B2Jul 30, 2002
Process for manufacturing a crystal axis-aligned vertical side wall device
IBM17 citations92
US6403423B1Jun 11, 2002
Modified gate processing for optimized definition of array and logic devices on same chip
IBM38 citations92
US6320215B1Nov 20, 2001
Crystal-axis-aligned vertical side wall device
IBM31 citations92
US6369419B1Apr 9, 2002
Self-aligned near surface strap for high density trench DRAMS
IBM6 citations74
US6656807B2Dec 2, 2003
Grooved planar DRAM transfer device using buried pocket
IBM11 citations73
US6759291B2Jul 6, 2004
Self-aligned near surface strap for high density trench DRAMS
IBM4 citations63
US6614074B2Sep 2, 2003
Grooved planar DRAM transfer device using buried pocket
IBM3 citations62
US6495876B1Dec 17, 2002
DRAM strap: hydrogen annealing for improved strap resistance in high density trench DRAMS
IBM4 citations61
HEFEI RELIANCE MEMORY LTD
3 patentsUS11468947B2Oct 11, 2022
Techniques for initializing resistive memory devices by applying voltages with different polarities
HEFEI RELIANCE MEMORY LTD4 citations73
US10943655B2Mar 9, 2021
Techniques for initializing resistive memory devices by applying different polarity voltages across resistance change material
HEFEI RELIANCE MEMORY LTD4 citations73
US12027206B2Jul 2, 2024
Techniques for initializing resistive memory devices by applying voltages with different polarities
HEFEI RELIANCE MEMORY LTD0 citations62