Inventor
SASSA MICHINARI
JP22 patents
⚠️ This page may combine multiple inventors who share the name “SASSA MICHINARI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOYODA GOSEI KK
18 patentsUS5862167AJan 19, 1999
Light-emitting semiconductor device using gallium nitride compound
TOYODA GOSEI KK177 citations99
US7138286B2Nov 21, 2006
Light-emitting semiconductor device using group III nitrogen compound
TOYODA GOSEI KK47 citations96
US6362017B1Mar 26, 2002
Light-emitting semiconductor device using gallium nitride group compound
TOYODA GOSEI KK44 citations96
US6265726B1Jul 24, 2001
Light-emitting aluminum gallium indium nitride compound semiconductor device having an improved luminous intensity
TOYODA GOSEI KK62 citations96
US6005258ADec 21, 1999
Light-emitting semiconductor device using group III Nitrogen compound having emission layer doped with donor and acceptor impurities
TOYODA GOSEI KK69 citations96
US5753939AMay 19, 1998
Light-emitting semiconductor device using a Group III nitride compound and having a contact layer upon which an electrode is formed
TOYODA GOSEI KK80 citations96
US5733796AMar 31, 1998
Light-emitting semiconductor device using gallium nitride group compound
TOYODA GOSEI KK77 citations96
US5652438AJul 29, 1997
Light-emitting semiconductor device using group III nitride compound
TOYODA GOSEI KK68 citations96
US5650641AJul 22, 1997
Semiconductor device having group III nitride compound and enabling control of emission color, and flat display comprising such device
TOYODA GOSEI KK56 citations96
US5278433AJan 11, 1994
Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer
TOYODA GOSEI KK86 citations96
US6249012B1Jun 19, 2001
Light emitting semiconductor device using gallium nitride group compound
TOYODA GOSEI KK13 citations82
US7867800B2Jan 11, 2011
Light-emitting semiconductor device using group III nitrogen compound
TOYODA GOSEI KK5 citations74
US7001790B2Feb 21, 2006
Light-emitting aluminum gallium indium nitride compound semiconductor device having an improved luminous intensity
TOYODA GOSEI KK3 citations74
US6472690B1Oct 29, 2002
Gallium nitride group compound semiconductor
TOYODA GOSEI KK7 citations74
US6607595B1Aug 19, 2003
Method for producing a light-emitting semiconductor device
TOYODA GOSEI KK8 citations72
US7332366B2Feb 19, 2008
Light-emitting semiconductor device using group III nitrogen compound
TOYODA GOSEI KK3 citations63
US6830992B1Dec 14, 2004
Method for manufacturing a gallium nitride group compound semiconductor
TOYODA GOSEI KK1 citations52
US6472689B1Oct 29, 2002
Light emitting device
TOYODA GOSEI KK0 citations52