Inventor
SHIBATA NAOKI
JP168 patents
⚠️ This page may combine multiple inventors who share the name “SHIBATA NAOKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOYODA GOSEI KK
40 patentsUS6426512B1Jul 30, 2002
Group III nitride compound semiconductor device
TOYODA GOSEI KK222 citations99
US6342404B1Jan 29, 2002
Group III nitride compound semiconductor device and method for producing
TOYODA GOSEI KK137 citations99
US5862167AJan 19, 1999
Light-emitting semiconductor device using gallium nitride compound
TOYODA GOSEI KK177 citations99
US6982435B2Jan 3, 2006
Group III nitride compound semiconductor device and method for producing the same
TOYODA GOSEI KK100 citations98
US6891203B2May 10, 2005
Light emitting device
TOYODA GOSEI KK108 citations98
US6841808B2Jan 11, 2005
Group III nitride compound semiconductor device and method for producing the same
TOYODA GOSEI KK124 citations98
US6100545AAug 8, 2000
GaN type semiconductor device
TOYODA GOSEI KK188 citations98
US7128846B2Oct 31, 2006
Process for producing group III nitride compound semiconductor
TOYODA GOSEI KK84 citations97
US6335217B1Jan 1, 2002
GaN type semiconductor device fabrication
TOYODA GOSEI KK83 citations97
US7138286B2Nov 21, 2006
Light-emitting semiconductor device using group III nitrogen compound
TOYODA GOSEI KK47 citations96
US6593016B1Jul 15, 2003
Group III nitride compound semiconductor device and producing method thereof
TOYODA GOSEI KK41 citations96
US6589808B2Jul 8, 2003
GaN type semiconductor device
TOYODA GOSEI KK46 citations96
US6500689B2Dec 31, 2002
Process for producing GaN related compound semiconductor
TOYODA GOSEI KK46 citations96
US6291840B1Sep 18, 2001
GaN related compound semiconductor light-emitting device
TOYODA GOSEI KK38 citations96
US6265726B1Jul 24, 2001
Light-emitting aluminum gallium indium nitride compound semiconductor device having an improved luminous intensity
TOYODA GOSEI KK62 citations96
US6008539ADec 28, 1999
Electrodes for p-type group III nitride compound semiconductors
TOYODA GOSEI KK76 citations96
US6005258ADec 21, 1999
Light-emitting semiconductor device using group III Nitrogen compound having emission layer doped with donor and acceptor impurities
TOYODA GOSEI KK69 citations96
US5753939AMay 19, 1998
Light-emitting semiconductor device using a Group III nitride compound and having a contact layer upon which an electrode is formed
TOYODA GOSEI KK80 citations96
US5700713ADec 23, 1997
Light emitting semiconductor device using group III nitride compound and method of producing the same
TOYODA GOSEI KK76 citations96
US5652438AJul 29, 1997
Light-emitting semiconductor device using group III nitride compound
TOYODA GOSEI KK68 citations96
US5650641AJul 22, 1997
Semiconductor device having group III nitride compound and enabling control of emission color, and flat display comprising such device
TOYODA GOSEI KK56 citations96
US6933169B2Aug 23, 2005
Optical semiconductor device
TOYODA GOSEI KK20 citations93
US6191436B1Feb 20, 2001
Optical semiconductor device
TOYODA GOSEI KK24 citations93
US6023076AFeb 8, 2000
Group III nitride compound semiconductor light emitting device having a current path between electrodes
TOYODA GOSEI KK46 citations93
US7312472B2Dec 25, 2007
Compound semiconductor element based on Group III element nitride
TOYODA GOSEI KK19 citations92
US7247884B2Jul 24, 2007
Group III nitride compound semiconductor light-emitting element
TOYODA GOSEI KK35 citations92
US7042012B2May 9, 2006
Semiconductor light-emitting device
TOYODA GOSEI KK28 citations92
US6955936B2Oct 18, 2005
Methods and devices related to electrode pads for p-type Group III nitride compound semiconductors
TOYODA GOSEI KK24 citations92
US6939733B2Sep 6, 2005
Group III nitride compound semiconductor device and method of producing the same
TOYODA GOSEI KK20 citations92
US6897139B2May 24, 2005
Group III nitride compound semiconductor device
TOYODA GOSEI KK47 citations92
US6875629B2Apr 5, 2005
III group nitride based semiconductor element and method for manufacture thereof
TOYODA GOSEI KK47 citations92
US6830949B2Dec 14, 2004
Method for producing group-III nitride compound semiconductor device
TOYODA GOSEI KK25 citations92
US6806571B2Oct 19, 2004
III nitride compound semiconductor element an electrode forming method
TOYODA GOSEI KK20 citations92
US6734468B2May 11, 2004
Devices related to electrode pads for p-type group III nitride compound semiconductors
TOYODA GOSEI KK23 citations92
US6713789B1Mar 30, 2004
Group III nitride compound semiconductor device and method of producing the same
TOYODA GOSEI KK42 citations92
US6649943B2Nov 18, 2003
Group III nitride compound semiconductor light-emitting element
TOYODA GOSEI KK33 citations92
US6623998B2Sep 23, 2003
Method for manufacturing group III nitride compound semiconductor device
TOYODA GOSEI KK32 citations92
US6531719B2Mar 11, 2003
Group III nitride compound semiconductor device
TOYODA GOSEI KK35 citations92
US6121127ASep 19, 2000
Methods and devices related to electrodes for p-type group III nitride compound semiconductors
TOYODA GOSEI KK38 citations92
US6033927AMar 7, 2000
Method for separating a substrate of a group III nitride semiconductor light-emitting device
TOYODA GOSEI KK42 citations92
MITSUBISHI HEAVY IND LTD
4 patentsUSD881927SApr 21, 2020
Display screen with animated graphical user interface
MITSUBISHI HEAVY IND LTD58 citations94
USD599075SAug 25, 2009
Display panel for forklift
MITSUBISHI HEAVY IND LTD18 citations93
USD914046SMar 23, 2021
Display screen with graphical user interface
MITSUBISHI HEAVY IND LTD17 citations91
USD590409SApr 14, 2009
Transitional image for liquid crystal display panel for forklift truck
MITSUBISHI HEAVY IND LTD30 citations91
EASTMAN KODAK CO
3 patentsNEC CORP
1 patentSHIBATA NAOKI
1 patentFUJI HEAVY IND LTD
1 patentShowing the top 50 of 168 patents by PatentIndex Score.