Inventor
ZINK SEBASTIEN
FR28 patents
⚠️ This page may combine multiple inventors who share the name “ZINK SEBASTIEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ST MICROELECTRONICS SA
23 patentsUS6807103B2Oct 19, 2004
Page-erasable flash memory
ST MICROELECTRONICS SA183 citations98
US6219277B1Apr 17, 2001
Device and method for the reading of EEPROM cells
ST MICROELECTRONICS SA67 citations96
US6091641AJul 18, 2000
Non-volatile memory device and method for the programming of the same
ST MICROELECTRONICS SA58 citations96
US6839285B2Jan 4, 2005
Page by page programmable flash memory
ST MICROELECTRONICS SA37 citations92
US6714453B2Mar 30, 2004
Flash memory including means of checking memory cell threshold voltages
ST MICROELECTRONICS SA24 citations92
US6477101B2Nov 5, 2002
Read-ahead electrically erasable and programmable serial memory
ST MICROELECTRONICS SA28 citations92
US5999447ADec 7, 1999
Non-volatile electrically erasable and programmable memory
ST MICROELECTRONICS SA31 citations92
US5995416ANov 30, 1999
Method and circuit for the generation of programming and erasure voltage in a non-volatile memory
ST MICROELECTRONICS SA23 citations92
US7079448B2Jul 18, 2006
Word-programmable flash memory
ST MICROELECTRONICS SA13 citations84
US7046577B2May 16, 2006
Negative voltage word line decoder, having compact terminating elements
ST MICROELECTRONICS SA13 citations84
US6965526B2Nov 15, 2005
Sectored flash memory comprising means for controlling and for refreshing memory cells
ST MICROELECTRONICS SA17 citations84
US6891756B2May 10, 2005
Flash memory comprising an erase verify algorithm integrated into a programming algorithm
ST MICROELECTRONICS SA12 citations84
US6118709ASep 12, 2000
Externally controlled power on reset device for non-volatile memory in integrated circuit form
ST MICROELECTRONICS SA8 citations74
US5978268ANov 2, 1999
Circuit for the generation of voltage for the programming or erasure of a memory that uses floating-gate transistors
ST MICROELECTRONICS SA8 citations74
US6568510B2May 27, 2003
Flash memory including means of checking memory cell threshold voltages
ST MICROELECTRONICS SA7 citations73
US6359822B1Mar 19, 2002
Serial access integrated circuit memory
ST MICROELECTRONICS SA9 citations73
US7330381B2Feb 12, 2008
Method and apparatus for a continuous read command in an extended memory array
ST MICROELECTRONICS SA6 citations72
US7290078B2Oct 30, 2007
Serial memory comprising means for protecting an extended memory array during a write operation
ST MICROELECTRONICS SA4 citations62
US7050335B2May 23, 2006
Flash memory comprising means for checking and refreshing memory cells in the erased state
ST MICROELECTRONICS SA3 citations62
US6504791B1Jan 7, 2003
Method for page mode writing in an electrically erasable/programmable non-volatile memory and corresponding architecture
ST MICROELECTRONICS SA5 citations62
US6385096B1May 7, 2002
Memory incorporating column register and method of writing in said memory
ST MICROELECTRONICS SA0 citations51
US6324117B1Nov 27, 2001
Method of selecting a memory access line and an access line decoder for performing the same
ST MICROELECTRONICS SA0 citations51
US6307792B1Oct 23, 2001
Memory incorporating column register and method of writing in said memory
ST MICROELECTRONICS SA1 citations51
SGS THOMSON MICROELECTRONICS
4 patentsUS6119210ASep 12, 2000
Device for the protection of stored data using a time delay circuit
SGS THOMSON MICROELECTRONICS17 citations82
US6085280AJul 4, 2000
Parallel-access memory and method
SGS THOMSON MICROELECTRONICS13 citations74
US5946241AAug 31, 1999
Non-volatile memory in integrated circuit form with fast reading
SGS THOMSON MICROELECTRONICS12 citations74
US5787040AJul 28, 1998
Device for the protection of stored data
SGS THOMSON MICROELECTRONICS9 citations72