Inventor
WEI SUNG-MIN
TW3 patents
Patents
3 patentsUS6046084AApr 4, 2000
Isotropic etching of a hemispherical grain silicon layer to improve the quality of an overlying dielectric layer
VANGUARD INT SEMICONDUCT CORP19 citations77
US6713338B2Mar 30, 2004
Method for fabricating source/drain devices
VANGUARD INT SEMICONDUCT CORP7 citations65
US6835636B2Dec 28, 2004
Method for fabricating source/drain devices
VANGUARD INT SEMICONDUCT CORP0 citations43