Inventor

GARDNER NATHAN F

US38 patents

⚠️ This page may combine multiple inventors who share the name “GARDNER NATHAN F”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GARDNER NATHAN F

LUMILEDS LIGHTING LLC

Semiconductor light emitting devices

Indium gallium nitride smoothing structures for III-nitride devices

Indium gallium nitride smoothing structures for III-nitride devices

Light emitting devices including tunnel junctions

Heterostructures for III-nitride light emitting devices

Light emitting diodes with graded composition active regions

III-nitride light-emitting devices with improved high-current efficiency

PHILIPS LUMILEDS LIGHTING CO

A1InGaP LED having reduced temperature dependence

Light emitting diodes with graded composition active regions

Semiconductor light emitting devices with graded composition light emitting layers

III-nitride light emitting devices grown on templates to reduce strain

III-nitride light emitting device with reduced strain light emitting layer

Reverse polarization light emitting region for a semiconductor light emitting device

lll-phosphide light emitting devices with thin active layers

YI SUNGSOO

Semiconductor light emitting device growing active layer on textured surface

Controlling pit formation in a III-nitride device

Controlling pit formation in a III-nitride device

KRAMES MICHAEL R

Substrate for growing a III-V light emitting device

Substrate for growing a III-V light emitting device

KONINKL PHILIPS ELECTRONICS NV

Semiconductor light emitting devices including in-plane light emitting layers

A1InGaP LED having reduced temperature dependence

WIERER JR JONATHAN J

Grown photonic crystals in semiconductor light emitting devices

Grown photonic crystals in semiconductor light emitting devices

GARDNER NATHAN F

Light emitting device grown on wavelength converting substrate

Method of forming a composite substrate and growing a III-V light emitting device over the composite substrate

LUMILEDS LLC

Semiconductor light emitting device growing active layer on textured surface

III-nitride light emitting device with double heterostructure light emitting region

LETERTRE FABRICE

Methods of forming relaxed layers of semiconductor materials, semiconductor structures, devices and engineered substrates including same

Relaxation of strained layers

PHILIPS LUMILIEDS LIGHTING CO

III-nitride light emitting devices grown on templates to reduce strain

SOITEC SILICON ON INSULATOR

Methods for relaxation and transfer of strained layers and structures fabricated thereby

GLO AB

Light emitting diodes with integrated reflector for a direct view display and method of making thereof

UNIV ILLINOIS

Halide dopant process for producing semi-insulating group III-V regions for semiconductor devices

SHEN YU-CHEN

III-nitride light emitting device with double heterostructure light emitting region

PHILIPS LUMILED LIGHTING CO LL

III-nitride light emitting devices grown on templates to reduce strain

GUENARD PASCAL

Methods for relaxation and transfer of strained layers and structures fabricated thereby

KONINK PHLLIPS ELECTRONICS N V

III-nitride light emitting device with double heterostructure light emitting region

PHILIPS LUMILEDS LIGHTING CO L

AllnGaP LED having reduced temperature dependence