Inventor
OSAWA AKIHIKO
JP21 patents
Patents
21 patentsUS6740931B2May 25, 2004
Semiconductor device
TOSHIBA KK95 citations98
US6239464B1May 29, 2001
Semiconductor gate trench with covered open ends
TOSHIBA KK86 citations98
US5126807AJun 30, 1992
Vertical MOS transistor and its production method
TOSHIBA KK193 citations98
US5578508ANov 26, 1996
Vertical power MOSFET and process of fabricating the same
TOSHIBA KK135 citations97
US5242845ASep 7, 1993
Method of production of vertical MOS transistor
TOSHIBA KK121 citations97
US6501129B2Dec 31, 2002
Semiconductor device
TOSHIBA KK52 citations96
US6060747AMay 9, 2000
Semiconductor device
TOSHIBA KK80 citations96
US6995426B2Feb 7, 2006
Semiconductor device having vertical metal insulator semiconductor transistors having plural spatially overlapping regions of different conductivity type
TOSHIBA KK27 citations92
US6627499B2Sep 30, 2003
Semiconductor device and method of manufacturing the same
TOSHIBA KK24 citations92
US5554872ASep 10, 1996
Semiconductor device and method of increasing device breakdown voltage of semiconductor device
TOSHIBA KK20 citations92
US5250446AOct 5, 1993
Method of manufacturing a semiconductor device by forming at least three regions of different lifetimes of carriers at different depths
TOSHIBA KK48 citations92
US5243205ASep 7, 1993
Semiconductor device with overvoltage protective function
TOSHIBA KK35 citations92
US5126817AJun 30, 1992
Dielectrically isolated structure for use in soi-type semiconductor device
TOSHIBA KK33 citations92
US5084408AJan 28, 1992
Method of making complete dielectric isolation structure in semiconductor integrated circuit
TOSHIBA KK36 citations92
US5731637AMar 24, 1998
Semiconductor device
TOSHIBA KK27 citations91
US6010950AJan 4, 2000
Method of manufacturing semiconductor bonded substrate
TOSHIBA KK10 citations74
US5029324AJul 2, 1991
Semiconductor device having a semiconductive protection layer
TOSHIBA KK10 citations74
US6031276AFeb 29, 2000
Semiconductor device and method of manufacturing the same with stable control of lifetime carriers
TOSHIBA KK7 citations73
US4984052AJan 8, 1991
Bonded substrate of semiconductor elements having a high withstand voltage
TOSHIBA KK15 citations73
US6084263AJul 4, 2000
Power device having high breakdown voltage and method of manufacturing the same
TOSHIBA KK2 citations61
US7227223B2Jun 5, 2007
Power MOS transistor having trench gate
TOSHIBA KK3 citations58