Inventor
HIRAYANAGI NORIYUKI
JP27 patents
⚠️ This page may combine multiple inventors who share the name “HIRAYANAGI NORIYUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NIKON CORP
26 patentsUS5981947ANov 9, 1999
Apparatus for detecting or collecting secondary electrons, charged-particle beam exposure apparatus comprising same, and related methods
NIKON CORP94 citations98
US6171736B1Jan 9, 2001
Projection-microlithography alignment method utilizing mask with separate mask substrates
NIKON CORP55 citations96
US5847813ADec 8, 1998
Mask holder for microlithography exposure
NIKON CORP70 citations96
US6835511B2Dec 28, 2004
Methods and apparatus for detecting and correcting reticle deformations in microlithography
NIKON CORP20 citations92
US6632722B2Oct 14, 2003
Fiducial mark bodies for charged-particle-beam (CPB) microlithography, methods for making same, and CPB microlithography apparatus comprising same
NIKON CORP29 citations92
US6627903B1Sep 30, 2003
Methods and devices for calibrating a charged-particle-beam microlithography apparatus, and microelectronic-device fabrication methods comprising same
NIKON CORP39 citations92
US6522519B1Feb 18, 2003
Electrostatic chucking device and methods for holding microlithographic sample
NIKON CORP44 citations92
US6521900B1Feb 18, 2003
Alignment marks for charged-particle-beam microlithography, and alignment methods using same
NIKON CORP39 citations92
US6433346B1Aug 13, 2002
Electrostatic reticle chucks, charged-particle-beam microlithography apparatus and methods, and semiconductor-device manufacturing methods comprising same
NIKON CORP29 citations92
US6399945B1Jun 4, 2002
Backscattered-electron detection systems and associated methods
NIKON CORP34 citations92
US6204509B1Mar 20, 2001
Projection-microlithography apparatus, masks, and related methods incorporating reticle-distortion measurement and correction
NIKON CORP43 citations92
US6180289B1Jan 30, 2001
Projection-microlithography mask with separate mask substrates
NIKON CORP29 citations92
US6447964B2Sep 10, 2002
Charged-particle-beam microlithography methods including chip-exposure sequences for reducing thermally induced lateral shift of exposure position on the substrate
NIKON CORP17 citations84
US6841402B1Jan 11, 2005
Alignment-mark detection methods and devices for charged-particle-beam microlithography, and microelectronic-device manufacturing methods comprising same
NIKON CORP10 citations74
US6657207B2Dec 2, 2003
Charged-particle-beam microlithography apparatus and methods including optical corrections made during subfield exposures
NIKON CORP7 citations74
US6627905B1Sep 30, 2003
Charged-particle-beam mask-based exposure apparatus employing a variable mask-illumination field and alignment and calibration methods therefor
NIKON CORP8 citations74
US6429090B1Aug 6, 2002
Fiducial mark bodies for charged-particle-beam (CPB) microlithography, methods for making same, and CPB microlithography apparatus comprising same
NIKON CORP6 citations74
US7483123B2Jan 27, 2009
Substrate conveyor apparatus, substrate conveyance method and exposure apparatus
NIKON CORP5 citations63
US7433017B2Oct 7, 2008
Method of measuring the position of a mask surface along the height direction, exposure device, and exposure method
NIKON CORP3 citations63
US6936831B2Aug 30, 2005
Divided reticles for charged-particle-beam microlithography apparatus, and methods for using same
NIKON CORP4 citations63
US6909490B2Jun 21, 2005
Reticle chambers and reticle cassettes providing temperature control and ready exchange of reticles for exposure
NIKON CORP6 citations63
US7862961B2Jan 4, 2011
Mask and exposure apparatus
NIKON CORP1 citations52
US6965114B2Nov 15, 2005
Apparatus and methods for mask/substrate alignment in charged-particle-beam pattern-transfer
NIKON CORP1 citations52
US6627906B2Sep 30, 2003
Control of exposure in charged-particle-beam microlithography based on beam-transmissivity of the reticle
NIKON CORP1 citations52
US8018577B2Sep 13, 2011
Illumination-sensor calibration methods, and exposure methods and apparatus and device-manufacturing methods including same, and reflective masks used in same
NIKON CORP0 citations36
US6750464B2Jun 15, 2004
Alignment-mark patterns defined on a stencil reticle and detectable, after lithographic transfer to a substrate, using an optical-based detector
NIKON CORP0 citations33