Inventor
RESTA CLAUDIO
IT35 patents
⚠️ This page may combine multiple inventors who share the name “RESTA CLAUDIO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
OVONYX INC
9 patentsUS7154774B2Dec 26, 2006
Detecting switching of access elements of phase change memory cells
OVONYX INC137 citations99
US7388775B2Jun 17, 2008
Detecting switching of access elements of phase change memory cells
OVONYX INC98 citations98
US7050328B2May 23, 2006
Phase change memory device
OVONYX INC91 citations98
US7570524B2Aug 4, 2009
Circuitry for reading phase change memory cells having a clamping circuit
OVONYX INC44 citations96
US7495944B2Feb 24, 2009
Reading phase change memories
OVONYX INC23 citations93
US7203087B2Apr 10, 2007
Fast reading, low consumption memory device and reading method thereof
OVONYX INC24 citations93
US7149132B2Dec 12, 2006
Biasing circuit for use in a non-volatile memory device
OVONYX INC25 citations93
US7020014B2Mar 28, 2006
Circuit and method for temperature tracing of devices including an element of chalcogenic material, in particular phase change memory devices
OVONYX INC36 citations92
US7936584B2May 3, 2011
Reading phase change memories
OVONYX INC0 citations52
ST MICROELECTRONICS SRL
7 patentsUS7257039B2Aug 14, 2007
Bit line discharge control method and circuit for a semiconductor memory
ST MICROELECTRONICS SRL20 citations93
US7092277B2Aug 15, 2006
Phase-change memory device with biasing of deselected bit lines
ST MICROELECTRONICS SRL39 citations93
US7324371B2Jan 29, 2008
Method of writing to a phase change memory device
ST MICROELECTRONICS SRL22 citations92
US7075841B2Jul 11, 2006
Writing circuit for a phase change memory device
ST MICROELECTRONICS SRL46 citations92
US7269080B2Sep 11, 2007
Nonvolatile phase change memory device and biasing method therefor
ST MICROELECTRONICS SRL11 citations84
US7414902B2Aug 19, 2008
Semiconductor memory device with information loss self-detect capability
ST MICROELECTRONICS SRL5 citations63
US8026757B2Sep 27, 2011
Current mirror circuit, in particular for a non-volatile memory device
ST MICROELECTRONICS SRL0 citations42
BEDESCHI FERDINANDO
6 patentsUS8259515B2Sep 4, 2012
Circuitry for reading phase-change memory cells having a clamping circuit
BEDESCHI FERDINANDO21 citations92
US9251897B2Feb 2, 2016
Methods for a phase-change memory array
BEDESCHI FERDINANDO4 citations84
US8149616B2Apr 3, 2012
Method for multilevel programming of phase change memory cells using adaptive reset pulses
BEDESCHI FERDINANDO10 citations82
US8565031B2Oct 22, 2013
Method for reading phase change memory cells having a clamping circuit
BEDESCHI FERDINANDO1 citations63
US8223535B2Jul 17, 2012
Phase-change memory device with discharge of leakage currents in deselected bitlines and method for discharging leakage currents in deselected bitlines of a phase-change memory device
BEDESCHI FERDINANDO4 citations63
US8760938B2Jun 24, 2014
Writing bit alterable memories
BEDESCHI FERDINANDO0 citations51
MICRON TECHNOLOGY INC
4 patentsUS10416909B2Sep 17, 2019
Methods for phase-change memory array
MICRON TECHNOLOGY INC1 citations73
US10216438B2Feb 26, 2019
Methods and related devices for operating a memory array
MICRON TECHNOLOGY INC1 citations73
US9851913B2Dec 26, 2017
Methods for operating a memory array
MICRON TECHNOLOGY INC3 citations73
US11003365B2May 11, 2021
Methods and related devices for operating a memory array
MICRON TECHNOLOGY INC0 citations62
LOWREY TYLER
3 patentsUS8259525B2Sep 4, 2012
Using a bit specific reference level to read a memory
LOWREY TYLER6 citations84
US8116159B2Feb 14, 2012
Using a bit specific reference level to read a resistive memory
LOWREY TYLER5 citations73
US8705306B2Apr 22, 2014
Method for using a bit specific reference level to read a phase change memory
LOWREY TYLER3 citations62