Inventor
GASTALDI ROBERTO
IT54 patents
⚠️ This page may combine multiple inventors who share the name “GASTALDI ROBERTO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SGS THOMSON MICROELECTRONICS
11 patentsUS5729490AMar 17, 1998
Parallel-dichotomic serial sensing method for sensing multiple-level non-volatile memory cells, and sensing circuit for actuating such method
SGS THOMSON MICROELECTRONICS135 citations97
US5973966AOct 26, 1999
Reading circuit for semiconductor memory cells
SGS THOMSON MICROELECTRONICS22 citations92
US5838612ANov 17, 1998
Reading circuit for multilevel non volatile memory cell devices
SGS THOMSON MICROELECTRONICS35 citations92
US5673221ASep 30, 1997
Circuit and method for reading a memory cell that can store multiple bits of data
SGS THOMSON MICROELECTRONICS40 citations92
US4888497ADec 19, 1989
Generator of reset pulses upon the rise of the power supply for CMOS-type integrated circuits
SGS THOMSON MICROELECTRONICS46 citations92
US5694363ADec 2, 1997
Reading circuit for memory cell devices having a low supply voltage
SGS THOMSON MICROELECTRONICS19 citations84
US5883837AMar 16, 1999
Reading circuit for semiconductor memory cells
SGS THOMSON MICROELECTRONICS11 citations74
US5757719AMay 26, 1998
Page-mode memory device with multiple-level memory cells
SGS THOMSON MICROELECTRONICS7 citations74
US5355341AOct 11, 1994
Integrated memory having improved testing means
SGS THOMSON MICROELECTRONICS7 citations72
US5701265ADec 23, 1997
Serial dichotomic method for sensing multiple-level non-volatile memory cells, and sensing circuit implementing such method
SGS THOMSON MICROELECTRONICS6 citations62
US5926416AJul 20, 1999
Electrically programmable non-volatile memory cells device for a reduced number of programming cycles
SGS THOMSON MICROELECTRONICS3 citations57
MICRON TECHNOLOGY INC
11 patentsUS10482954B2Nov 19, 2019
Phase change memory device
MICRON TECHNOLOGY INC4 citations84
US9779805B2Oct 3, 2017
Phase change memory device
MICRON TECHNOLOGY INC5 citations84
US9646689B2May 9, 2017
Refresh architecture and algorithm for non-volatile memories
MICRON TECHNOLOGY INC5 citations84
US9064565B2Jun 23, 2015
Phase change memory device
MICRON TECHNOLOGY INC6 citations84
US10074419B2Sep 11, 2018
Refresh architecture and algorithm for non-volatile memories
MICRON TECHNOLOGY INC2 citations73
US9711223B2Jul 18, 2017
Apparatus and methods including a bipolar junction transistor coupled to a string of memory cells
MICRON TECHNOLOGY INC2 citations73
US9047944B2Jun 2, 2015
Resistance variable memory sensing
MICRON TECHNOLOGY INC2 citations63
US10861552B2Dec 8, 2020
Apparatus and methods including a bipolar junction transistor coupled to a string of memory cells
MICRON TECHNOLOGY INC0 citations52
US10311951B2Jun 4, 2019
Refresh architecture and algorithm for non-volatile memories
MICRON TECHNOLOGY INC0 citations52
US10269430B2Apr 23, 2019
Apparatus and methods including a bipolar junction transistor coupled to a string of memory cells
MICRON TECHNOLOGY INC0 citations52
US9437294B2Sep 6, 2016
Resistance variable memory sensing
MICRON TECHNOLOGY INC0 citations52
ST MICROELECTRONICS SRL
7 patentsUS7257039B2Aug 14, 2007
Bit line discharge control method and circuit for a semiconductor memory
ST MICROELECTRONICS SRL20 citations93
US5710739AJan 20, 1998
Reading circuit for memory cells
ST MICROELECTRONICS SRL18 citations84
US6016271AJan 18, 2000
Method and circuit for generating a gate voltage in non-volatile memory devices
ST MICROELECTRONICS SRL11 citations74
US5546044AAug 13, 1996
Voltage generator circuit providing potentials of opposite polarity
ST MICROELECTRONICS SRL18 citations73
US6532171B2Mar 11, 2003
Nonvolatile semiconductor memory capable of selectively erasing a plurality of elemental memory units
ST MICROELECTRONICS SRL2 citations63
USRE38166EJul 1, 2003
Circuit and method for reading a memory cell that can store multiple bits of data
ST MICROELECTRONICS SRL3 citations62
US6839818B2Jan 4, 2005
Electrically modifiable, non-volatile, semiconductor memory which can keep a datum stored until an operation to modify the datum is completed
ST MICROELECTRONICS SRL2 citations61
OVONYX INC
4 patentsUS7154774B2Dec 26, 2006
Detecting switching of access elements of phase change memory cells
OVONYX INC137 citations99
US7388775B2Jun 17, 2008
Detecting switching of access elements of phase change memory cells
OVONYX INC98 citations98
US7495944B2Feb 24, 2009
Reading phase change memories
OVONYX INC23 citations93
US6989580B2Jan 24, 2006
Process for manufacturing an array of cells including selection bipolar junction transistors
OVONYX INC21 citations92
BEDESCHI FERDINANDO
4 patentsUS9070473B2Jun 30, 2015
Refresh architecture and algorithm for non-volatile memories
BEDESCHI FERDINANDO19 citations93
US8467237B2Jun 18, 2013
Read distribution management for phase change memory
BEDESCHI FERDINANDO21 citations93
US8510628B2Aug 13, 2013
Method and apparatuses for customizable error correction of memory
BEDESCHI FERDINANDO14 citations84
US8149616B2Apr 3, 2012
Method for multilevel programming of phase change memory cells using adaptive reset pulses
BEDESCHI FERDINANDO10 citations82
LOWREY TYLER
3 patentsUS8259525B2Sep 4, 2012
Using a bit specific reference level to read a memory
LOWREY TYLER6 citations84
US8116159B2Feb 14, 2012
Using a bit specific reference level to read a resistive memory
LOWREY TYLER5 citations73
US8705306B2Apr 22, 2014
Method for using a bit specific reference level to read a phase change memory
LOWREY TYLER3 citations62
PELLIZZER FABIO
2 patentsSABELT SPA
2 patentsBELT & BUCKLE S R L
2 patentsTESSARIOL PAOLO
1 patentSGS MICROELETTRONICA SPA
1 patentGROSSI ALESSANDRO
1 patentPARKINSON WARD D
1 patentShowing the top 50 of 54 patents by PatentIndex Score.