Inventor
LIN YVONNE
US22 patents
⚠️ This page may combine multiple inventors who share the name “LIN YVONNE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
5 patentsUS8797091B2Aug 5, 2014
Integrated circuits with bi-directional charge pumps
TAIWAN SEMICONDUCTOR MFG2 citations63
US9385118B2Jul 5, 2016
Capacitor array having capacitor cell structures
TAIWAN SEMICONDUCTOR MFG0 citations52
US9054577B2Jun 9, 2015
Charge pump and method of biasing deep N-well in charge pump
TAIWAN SEMICONDUCTOR MFG0 citations52
US9042171B2May 26, 2015
Integrated circuit including a voltage divider and methods of operating the same
TAIWAN SEMICONDUCTOR MFG0 citations52
US9170596B2Oct 27, 2015
Integrated circuits having cascode transistor
TAIWAN SEMICONDUCTOR MFG0 citations41
LIN YVONNE
4 patentsUS8780628B2Jul 15, 2014
Integrated circuit including a voltage divider and methods of operating the same
LIN YVONNE7 citations83
US8710908B2Apr 29, 2014
Charge pump and method of biasing deep N-well in charge pump
LIN YVONNE7 citations83
US8427229B2Apr 23, 2013
Integrated circuits with bi-directional charge pumps
LIN YVONNE4 citations61
US8908434B2Dec 9, 2014
Operating methods of flash memory and decoding circuits thereof
LIN YVONNE0 citations40
CONAIR
3 patentsTAIWAN SEMICONDUCTOR MFG CO LTD
3 patentsUS10466731B2Nov 5, 2019
Two-transistor bandgap reference circuit and FinFET device suited for same
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations83
US11150680B2Oct 19, 2021
Two-transistor bandgap reference circuit and FinFET device suited for same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10534393B2Jan 14, 2020
Two-transistor bandgap reference circuit and FinFET device suited for same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51