Inventor
JUN JIN-WON
KR3 patents
Patents
3 patentsUS6911397B2Jun 28, 2005
Method of forming dual damascene interconnection using low-k dielectric
SAMSUNG ELECTRONICS CO LTD42 citations91
US7361565B2Apr 22, 2008
Method of forming a metal gate in a semiconductor device
SAMSUNG ELECTRONICS CO LTD31 citations90
US6878598B2Apr 12, 2005
Method of forming thick metal silicide layer on gate electrode
SAMSUNG ELECTRONICS CO LTD12 citations81