Inventor
ABE HIROMI
JP36 patents
⚠️ This page may combine multiple inventors who share the name “ABE HIROMI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
RENESAS TECH CORP
12 patentsUS6989600B2Jan 24, 2006
Integrated circuit device having reduced substrate size and a method for manufacturing the same
RENESAS TECH CORP45 citations92
US6780757B2Aug 24, 2004
Semiconductor integrated circuit device and method for making the same
RENESAS TECH CORP17 citations92
US6861344B2Mar 1, 2005
Method of manufacturing a semiconductor integrated circuit device
RENESAS TECH CORP16 citations84
US6693001B2Feb 17, 2004
Process for producing semiconductor integrated circuit device
RENESAS TECH CORP17 citations84
US7569457B2Aug 4, 2009
Method of fabricating semiconductor device
RENESAS TECH CORP3 citations74
US7094655B2Aug 22, 2006
Method of fabricating semiconductor device
RENESAS TECH CORP8 citations74
US6670251B2Dec 30, 2003
Method of fabricating semiconductor device
RENESAS TECH CORP7 citations74
US7553766B2Jun 30, 2009
Method of fabricating semiconductor integrated circuit device
RENESAS TECH CORP2 citations63
US7314830B2Jan 1, 2008
Method of fabricating semiconductor integrated circuit device with 99.99 wt% cobalt
RENESAS TECH CORP2 citations63
US7314805B2Jan 1, 2008
Method for fabricating semiconductor device
RENESAS TECH CORP0 citations52
US7214577B2May 8, 2007
Method of fabricating semiconductor integrated circuit device
RENESAS TECH CORP0 citations52
US7118983B2Oct 10, 2006
Method of fabricating semiconductor device
RENESAS TECH CORP0 citations52
HITACHI LTD
10 patentsUS5904556AMay 18, 1999
Method for making semiconductor integrated circuit device having interconnection structure using tungsten film
HITACHI LTD63 citations95
US6583049B2Jun 24, 2003
Semiconductor integrated circuit device and method for making the same
HITACHI LTD13 citations92
US6503803B2Jan 7, 2003
Method of fabricating a semiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layer
HITACHI LTD16 citations92
US6300206B1Oct 9, 2001
Method for manufacturing semiconductor device
HITACHI LTD22 citations92
US6031288AFeb 29, 2000
Semiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layer and method of fabrication thereof
HITACHI LTD36 citations92
US6858484B2Feb 22, 2005
Method of fabricating semiconductor integrated circuit device
HITACHI LTD5 citations74
US6545326B2Apr 8, 2003
Method of fabricating semiconductor device
HITACHI LTD7 citations74
US6300237B1Oct 9, 2001
Semiconductor integrated circuit device and method for making the same
HITACHI LTD7 citations73
US6268658B1Jul 31, 2001
Semiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layer and method of fabrication thereof
HITACHI LTD10 citations73
US6538329B2Mar 25, 2003
Semiconductor integrated circuit device and method for making the same
HITACHI LTD0 citations51
RENESAS ELECTRONICS CORP
7 patentsUS9646901B2May 9, 2017
Semiconductor device with bond pad wiring lead-out arrangement avoiding bond pad probe mark area
RENESAS ELECTRONICS CORP3 citations84
US10566255B2Feb 18, 2020
Method of manufacturing semiconductor device
RENESAS ELECTRONICS CORP2 citations73
US9911673B2Mar 6, 2018
Semiconductor device with bond pad wiring lead-out arrangement avoiding bond pad probe mark area
RENESAS ELECTRONICS CORP1 citations62
US8912540B2Dec 16, 2014
Semiconductor device
RENESAS ELECTRONICS CORP2 citations62
US10134648B2Nov 20, 2018
Manufacturing method of semiconductor device
RENESAS ELECTRONICS CORP0 citations52
US9165845B2Oct 20, 2015
Semiconductor device
RENESAS ELECTRONICS CORP0 citations52
US8034715B2Oct 11, 2011
Method of fabricating semiconductor integrated circuit device
RENESAS ELECTRONICS CORP0 citations52
HITACHI ULSI SYS CO LTD
3 patentsUS7094642B2Aug 22, 2006
Method of fabricating semiconductor device
HITACHI ULSI SYS CO LTD0 citations52
US7074665B2Jul 11, 2006
Method of fabricating semiconductor device
HITACHI ULSI SYS CO LTD0 citations52
US7064040B2Jun 20, 2006
Method of fabricating semiconductor device
HITACHI ULSI SYS CO LTD0 citations52