Inventor
WANG MING-TSONG
TW23 patents
⚠️ This page may combine multiple inventors who share the name “WANG MING-TSONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
10 patentsUS6537919B1Mar 25, 2003
Process to remove micro-scratches
TAIWAN SEMICONDUCTOR MFG18 citations92
US7968967B2Jun 28, 2011
One-time-programmable anti-fuse formed using damascene process
TAIWAN SEMICONDUCTOR MFG13 citations84
US7579646B2Aug 25, 2009
Flash memory with deep quantum well and high-K dielectric
TAIWAN SEMICONDUCTOR MFG17 citations84
US9299740B2Mar 29, 2016
Image sensor with low step height between back-side metal and pixel array
TAIWAN SEMICONDUCTOR MFG3 citations72
US6541370B1Apr 1, 2003
Composite microelectronic dielectric layer with inhibited crack susceptibility
TAIWAN SEMICONDUCTOR MFG7 citations69
US6566263B1May 20, 2003
Method of forming an HDP CVD oxide layer over a metal line structure for high aspect ratio design rule
TAIWAN SEMICONDUCTOR MFG8 citations65
US6244936B1Jun 12, 2001
Method and device for reducing semiconductor defects caused by wafer clamping
TAIWAN SEMICONDUCTOR MFG5 citations54
US7316240B2Jan 8, 2008
Exhaust system and mini-exhaust static pressure controlling apparatus thereof
TAIWAN SEMICONDUCTOR MFG0 citations46
US6660125B2Dec 9, 2003
Sputter PM procedures with polish tool to effectively remove metal defects from target surface nodules (residue)
TAIWAN SEMICONDUCTOR MFG0 citations46
US6358851B1Mar 19, 2002
Sputter PM procedures with polish tool to effectively remove metal defects from target surface nodules (residue)
TAIWAN SEMICONDUCTOR MFG1 citations46
TAIWAN SEMICONDUCTOR MFG CO LTD
9 patentsUS10622394B2Apr 14, 2020
Image sensing device
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10038026B2Jul 31, 2018
Bond pad structure for bonding improvement
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US11244981B2Feb 8, 2022
Bond pad structure for bonding improvement
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US9536810B1Jan 3, 2017
Flat pad structure for integrating complementary metal-oxide-semiconductor (CMOS) image sensor processes
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10074680B2Sep 11, 2018
Image sensor with low step height between back-side metal and pixel array
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US11894410B2Feb 6, 2024
Bond pad structure for bonding improvement
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11342373B2May 24, 2022
Manufacturing method of image sensing device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10515995B2Dec 24, 2019
Bond pad structure for bonding improvement
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10304889B2May 28, 2019
Image sensor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
WANG MING-TSONG
4 patentsUS8816422B2Aug 26, 2014
Multi-trapping layer flash memory cell
WANG MING-TSONG5 citations72
US8212233B2Jul 3, 2012
Forming phase-change memory using self-aligned contact/via scheme
WANG MING-TSONG6 citations71
US8294197B2Oct 23, 2012
Program/erase schemes for floating gate memory cells
WANG MING-TSONG5 citations61
US8735963B2May 27, 2014
Flash memory cells having leakage-inhibition layers
WANG MING-TSONG2 citations60