Inventor

TODA HARUKI

JP235 patents

⚠️ This page may combine multiple inventors who share the name “TODA HARUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TODA HARUKI

TOSHIBA KK

Three-dimensional programmable resistance memory device with a read/write circuit stacked under a memory cell array

High-speed data transfer synchronizing system and method

Semiconductor memory device with high data read rate

Resistance change memory device

Resistance change memory device

Resistance change memory device

Resistance change memory device

Resistance change memory device having a variable resistance element formed of a first and second composite compound for storing a cation

Resistance change memory device having a variable resistance element with a recording layer electrode served as a cation source in a write or erase mode

Phase change memory device

Non-volatile semiconductor memory device reading and writing multi-value data from and into pair-cells

Semiconductor memory system comprising synchronous DRAM and controller thereof

Clock-synchronous semiconductor memory device and method for accessing the device

Phase-change memory device that stores information in a non-volatile manner by changing states of a memory material

Nonvolatile semiconductor memory

High-speed random access semiconductor memory device

High-speed cycle clock-synchronous memory device

Data receiver that performs synchronous data transfer with reference to memory module

Semiconductor memory device

Semiconductor memory capable of successively accessing cell array blocks with a plurality of operation modes having different cycle times

Semiconductor memory device

Clock control circuit

Synchronous dynamic random access memory

Semiconductor memory device

Semiconductor memory device

Data output circuit for dynamic memory device

Resistance change memory device

Resistance change memory device

Three-dimensional memory device

Phase changing memory device

Resistance change memory device

Resistance change memory device

Phase change memory device

Resistance change memory device

Resistance change memory device

Semiconductor memory device

Semiconductor memory device

Semiconductor memory device

Semiconductor memory device and data write method thereof

Semiconductor memory device

Non-volatile semiconductor memory device reading and writing multi-value data from and into pair-cell

Fast data transfer system with multiple memory modules and controller

High speed data transfer synchronizing system and method

Data selecting memory device and selected data transfer device

Clock signal generator circuit and semiconductor integrated circuit with the same circuit

Fuse circuit using anti-fuse and method for searching for failed address in semiconductor memory

Semiconductor memory system, and access control method for semiconductor memory and semiconductor memory

TODA HARUKI

Memory device having variable resistance memory cells disposed at crosspoint of wirings

Phase change memory device

Phase change memory device