Inventor
CHANG KO-HSING
TW31 patents
⚠️ This page may combine multiple inventors who share the name “CHANG KO-HSING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
POWERCHIP SEMICONDUCTOR CORP
25 patentsUS6635533B1Oct 21, 2003
Method of fabricating flash memory
POWERCHIP SEMICONDUCTOR CORP100 citations98
US6943404B2Sep 13, 2005
Sonos multi-level memory cell
POWERCHIP SEMICONDUCTOR CORP26 citations92
US6821849B2Nov 23, 2004
Split gate flash memory cell and manufacturing method thereof
POWERCHIP SEMICONDUCTOR CORP16 citations92
US6815758B1Nov 9, 2004
Flash memory cell
POWERCHIP SEMICONDUCTOR CORP17 citations92
US6794710B2Sep 21, 2004
Split-gate flash memory structure and method of manufacture
POWERCHIP SEMICONDUCTOR CORP30 citations92
US6768162B1Jul 27, 2004
Split gate flash memory cell and manufacturing method thereof
POWERCHIP SEMICONDUCTOR CORP23 citations92
US6737700B1May 18, 2004
Non-volatile memory cell structure and method for manufacturing thereof
POWERCHIP SEMICONDUCTOR CORP17 citations92
US7049189B2May 23, 2006
Method of fabricating non-volatile memory cell adapted for integration of devices and for multiple read/write operations
POWERCHIP SEMICONDUCTOR CORP21 citations91
US7208796B2Apr 24, 2007
Split gate flash memory
POWERCHIP SEMICONDUCTOR CORP31 citations88
US7164177B2Jan 16, 2007
Multi-level memory cell
POWERCHIP SEMICONDUCTOR CORP13 citations83
US7091550B2Aug 15, 2006
Non-volatile memory device and method of manufacturing the same
POWERCHIP SEMICONDUCTOR CORP17 citations83
US7038267B2May 2, 2006
Non-volatile memory cell and manufacturing method thereof
POWERCHIP SEMICONDUCTOR CORP15 citations83
US7491998B2Feb 17, 2009
One time programmable memory and the manufacturing method thereof
POWERCHIP SEMICONDUCTOR CORP8 citations80
US6870212B2Mar 22, 2005
Trench flash memory device and method of fabricating thereof
POWERCHIP SEMICONDUCTOR CORP10 citations74
US7192832B2Mar 20, 2007
Flash memory cell and fabricating method thereof
POWERCHIP SEMICONDUCTOR CORP6 citations73
US7056787B2Jun 6, 2006
Method of manufacturing semiconductor device
POWERCHIP SEMICONDUCTOR CORP9 citations73
US7446370B2Nov 4, 2008
Non-volatile memory
POWERCHIP SEMICONDUCTOR CORP8 citations70
US7405124B2Jul 29, 2008
Fabricating method of non-volatile memory
POWERCHIP SEMICONDUCTOR CORP2 citations63
US6869842B2Mar 22, 2005
Method for manufacturing non-volatile memory cell
POWERCHIP SEMICONDUCTOR CORP4 citations63
US6867099B2Mar 15, 2005
Spilt-gate flash memory structure and method of manufacture
POWERCHIP SEMICONDUCTOR CORP2 citations63
US7575941B2Aug 18, 2009
Method of manufacturing photodiode
POWERCHIP SEMICONDUCTOR CORP2 citations61
US7394126B2Jul 1, 2008
Non-volatile memory and manufacturing method thereof
POWERCHIP SEMICONDUCTOR CORP0 citations51
US7098109B2Aug 29, 2006
Multi-level memory cell and fabricating method thereof
POWERCHIP SEMICONDUCTOR CORP0 citations51
US7074674B1Jul 11, 2006
Method for manufacturing one-time electrically programmable read only memory
POWERCHIP SEMICONDUCTOR CORP1 citations51
US7528438B2May 5, 2009
Non-volatile memory including assist gate
POWERCHIP SEMICONDUCTOR CORP0 citations41
WORLDWIDE SEMICONDUCTOR MANUFA
5 patentsUS5973354AOct 26, 1999
Single polycylindrical flash memory cell having high coupling ratio
WORLDWIDE SEMICONDUCTOR MANUFA20 citations92
US6096603AAug 1, 2000
Method of fabricating a split gate structure of a flash memory
WORLDWIDE SEMICONDUCTOR MANUFA78 citations91
US6026028AFeb 15, 2000
Hot carrier injection programming and negative gate voltage channel erase flash EEPROM structure
WORLDWIDE SEMICONDUCTOR MANUFA23 citations91
US6117748ASep 12, 2000
Dishing free process for shallow trench isolation
WORLDWIDE SEMICONDUCTOR MANUFA17 citations84
US6103575AAug 15, 2000
Method of forming a single poly cylindrical flash memory cell having high coupling ratio
WORLDWIDE SEMICONDUCTOR MANUFA5 citations63