Inventor

KNARR RANDOLPH F

US24 patents

⚠️ This page may combine multiple inventors who share the name “KNARR RANDOLPH F”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KNARR RANDOLPH F

IBM

Sacrificial seed layer process for forming C4 solder bumps

Structure and method of forming electrodeposited contacts

Low impedance power distribution structure for a semiconductor chip package

Method of forming electrodeposited contacts

Surface cleaning using sacrificial getter layer

Method and process for forming a self-aligned silicide contact

Tetra aza ligand systems as complexing agents for electroless deposition of copper

Method for forming self-aligned metal silicide contacts

Method for forming self-aligned metal silicide contacts

I/C chip suitable for wire bonding

Copper contact via structure using hybrid barrier layer

Barrier for interconnect and method

Tetra aza ligand systems as complexing agents for electroless deposition of copper

Environmentally green process and composition for cobalt wet etch

Replacement gate MOSFET with a high performance gate electrode

Method of forming a bond pad on an I/C chip and resulting structure

Method to recess cobalt for gate metal application

Method to recess cobalt for gate metal application

Method to recess cobalt for gate metal application

CABRAL JR CYRIL

Contact metallurgy structure

Method and process for forming a self-aligned silicide contact

ENGEL BRETT H

Overlapping contacts for semiconductor device

LI ZHENGWEN

Replacement gate MOSFET with a high performance gate electrode

GLOBALFOUNDRIES INC

Replacement gate MOSFET with a high performance gate electrode