Inventor
MIYASHITA KATSURA
JP10 patents
⚠️ This page may combine multiple inventors who share the name “MIYASHITA KATSURA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
7 patentsUS6869867B2Mar 22, 2005
Semiconductor device comprising metal silicide films formed to cover gate electrode and source-drain diffusion layers and method of manufacturing the same wherein the silicide on gate is thicker than on source-drain
TOSHIBA KK55 citations94
US6673705B2Jan 6, 2004
Method of manufacturing a MISFET having post oxide films having at least two kinds of thickness
TOSHIBA KK23 citations90
US12519074B2Jan 6, 2026
Semiconductor chip and semiconductor device
TOSHIBA KK0 citations62
US7820492B2Oct 26, 2010
Electrical fuse with metal silicide pipe under gate electrode
TOSHIBA KK3 citations61
US7638432B2Dec 29, 2009
Semiconductor device comprising metal silicide films formed to cover gate electrode and source-drain diffusion layers and method of manufacturing the same
TOSHIBA KK1 citations61
US7220672B2May 22, 2007
Semiconductor device comprising metal silicide films formed to cover gate electrode and source-drain diffusion layers and method of manufacturing the same
TOSHIBA KK2 citations61
US12432967B2Sep 30, 2025
Semiconductor device and manufacturing method thereof
TOSHIBA KK0 citations50