Inventor
PAN SHING-CHYANG
TW57 patents
⚠️ This page may combine multiple inventors who share the name “PAN SHING-CHYANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
37 patentsUS9679804B1Jun 13, 2017
Multi-patterning to form vias with straight profiles
TAIWAN SEMICONDUCTOR MFG CO LTD19 citations92
US9659811B1May 23, 2017
Manufacturing method of semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD19 citations92
US10685873B2Jun 16, 2020
Etch stop layer for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US10468297B1Nov 5, 2019
Metal-based etch-stop layer
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US10535816B2Jan 14, 2020
Via structure, MRAM device using the via structure and method for fabricating the MRAM device
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations83
US11651993B2May 16, 2023
Etch stop layer for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11479849B2Oct 25, 2022
Physical vapor deposition chamber with target surface morphology monitor
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11322396B2May 3, 2022
Etch stop layer for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11049763B2Jun 29, 2021
Multi-patterning to form vias with straight profiles
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11004734B2May 11, 2021
Metal-based etch-stop layer
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9887072B2Feb 6, 2018
Systems and methods for integrated resputtering in a physical vapor deposition chamber
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9567668B2Feb 14, 2017
Plasma apparatus, magnetic-field controlling method, and semiconductor manufacturing method
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11515474B2Nov 29, 2022
Memory device and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11198606B2Dec 14, 2021
Structure for microelectromechanical systems (MEMS) devices to control pressure at high temperature
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10978301B2Apr 13, 2021
Morphology of resist mask prior to etching
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations72
US10867839B2Dec 15, 2020
Patterning methods for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US10862026B2Dec 8, 2020
Memory device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10727045B2Jul 28, 2020
Method for manufacturing a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10361112B2Jul 23, 2019
High aspect ratio gap fill
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12486566B2Dec 2, 2025
Physical vapor deposition chamber with target surface morphology monitor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12557572B2Feb 17, 2026
Method for manufacturing a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12451393B2Oct 21, 2025
Etch stop layer for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12151932B2Nov 26, 2024
Microelectromechanical systems device having a mechanically robust anti-stiction/outgassing structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11991930B2May 21, 2024
Memory device and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11814283B2Nov 14, 2023
Microelectromechanical systems device having a mechanically robust anti-stiction/outgassing structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11769693B2Sep 26, 2023
Metal-based etch-stop layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11697588B2Jul 11, 2023
Structure for microelectromechanical systems (MEMS) devices to control pressure at high temperature
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11040870B2Jun 22, 2021
Microelectromechanical systems device having a mechanically robust anti-stiction/outgassing structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12074058B2Aug 27, 2024
Patterning methods for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11676852B2Jun 13, 2023
Patterning methods for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12245529B2Mar 4, 2025
Diffusion barrier layer in programmable metallization cell
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11778931B2Oct 3, 2023
Diffusion barrier layer in programmable metallization cell
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11594678B2Feb 28, 2023
Diffusion barrier layer in programmable metallization cell
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US10515788B2Dec 24, 2019
Systems and methods for integrated resputtering in a physical vapor deposition chamber
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10510585B2Dec 17, 2019
Multi-patterning to form vias with straight profiles
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9818638B1Nov 14, 2017
Manufacturing method of semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9330915B2May 3, 2016
Surface pre-treatment for hard mask fabrication
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
TAIWAN SEMICONDUCTOR MFG
12 patentsUS8361900B2Jan 29, 2013
Barrier layer for copper interconnect
TAIWAN SEMICONDUCTOR MFG36 citations94
US7193327B2Mar 20, 2007
Barrier structure for semiconductor devices
TAIWAN SEMICONDUCTOR MFG43 citations93
US6846756B2Jan 25, 2005
Method for preventing low-k dielectric layer cracking in multi-layered dual damascene metallization layers
TAIWAN SEMICONDUCTOR MFG39 citations93
US6821905B2Nov 23, 2004
Method for avoiding carbon and nitrogen contamination of a dielectric insulating layer
TAIWAN SEMICONDUCTOR MFG24 citations91
US6656832B1Dec 2, 2003
Plasma treatment method for fabricating microelectronic fabrication having formed therein conductor layer with enhanced electrical properties
TAIWAN SEMICONDUCTOR MFG30 citations89
US7704886B2Apr 27, 2010
Multi-step Cu seed layer formation for improving sidewall coverage
TAIWAN SEMICONDUCTOR MFG16 citations84
US7247252B2Jul 24, 2007
Method of avoiding plasma arcing during RIE etching
TAIWAN SEMICONDUCTOR MFG12 citations79
US7253501B2Aug 7, 2007
High performance metallization cap layer
TAIWAN SEMICONDUCTOR MFG9 citations74
US7030023B2Apr 18, 2006
Method for simultaneous degas and baking in copper damascene process
TAIWAN SEMICONDUCTOR MFG7 citations74
US7805258B2Sep 28, 2010
System and method for film stress and curvature gradient mapping for screening problematic wafers
TAIWAN SEMICONDUCTOR MFG3 citations61
US7453149B2Nov 18, 2008
Composite barrier layer
TAIWAN SEMICONDUCTOR MFG2 citations61
USRE41935ENov 16, 2010
Method for preventing low-k dielectric layer cracking in multi-layered dual damascene metallization layers
TAIWAN SEMICONDUCTOR MFG0 citations52
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