Inventor
HORII SADAYOSHI
JP28 patents
⚠️ This page may combine multiple inventors who share the name “HORII SADAYOSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HITACHI INT ELECTRIC INC
16 patentsUS7648578B1Jan 19, 2010
Substrate processing apparatus, and method for manufacturing semiconductor device
HITACHI INT ELECTRIC INC30 citations92
US8026159B2Sep 27, 2011
Method of manufacturing semiconductor device and substrate processing apparatus
HITACHI INT ELECTRIC INC17 citations91
US6787481B2Sep 7, 2004
Method for manufacturing semiconductor device
HITACHI INT ELECTRIC INC29 citations91
US11476112B2Oct 18, 2022
Substrate processing apparatus
HITACHI INT ELECTRIC INC6 citations85
US9472637B2Oct 18, 2016
Semiconductor device having electrode made of high work function material and method of manufacturing the same
HITACHI INT ELECTRIC INC3 citations73
US6825126B2Nov 30, 2004
Manufacturing method of semiconductor device and substrate processing apparatus
HITACHI INT ELECTRIC INC11 citations71
US7531467B2May 12, 2009
Manufacturing method of semiconductor device and substrate processing apparatus
HITACHI INT ELECTRIC INC3 citations63
US7524766B2Apr 28, 2009
Method for manufacturing semiconductor device and substrate processing apparatus
HITACHI INT ELECTRIC INC3 citations63
US12087598B2Sep 10, 2024
Substrate processing apparatus
HITACHI INT ELECTRIC INC1 citations62
US7968437B2Jun 28, 2011
Semiconductor device manufacturing method and substrate processing apparatus
HITACHI INT ELECTRIC INC6 citations62
US7579276B2Aug 25, 2009
Substrate processing apparatus and method of manufacturing semiconductor device
HITACHI INT ELECTRIC INC3 citations62
US10604839B2Mar 31, 2020
Substrate processing apparatus, method of manufacturing semiconductor device, and method of processing substrate
HITACHI INT ELECTRIC INC1 citations61
US9653301B2May 16, 2017
Semiconductor device having electrode made of high work function material, method and apparatus for manufacturing the same
HITACHI INT ELECTRIC INC0 citations52
US9437704B2Sep 6, 2016
Semiconductor device having electrode made of high work function material, method and apparatus for manufacturing the same
HITACHI INT ELECTRIC INC1 citations52
US8741731B2Jun 3, 2014
Method of manufacturing a semiconductor device
HITACHI INT ELECTRIC INC1 citations52
US7723245B2May 25, 2010
Method for manufacturing semiconductor device, and substrate processing apparatus
HITACHI INT ELECTRIC INC1 citations52
HORII SADAYOSHI
5 patentsUS8435905B2May 7, 2013
Manufacturing method of semiconductor device, and substrate processing apparatus
HORII SADAYOSHI4 citations61
US8415237B2Apr 9, 2013
Method of manufacturing semiconductor device and substrate processing apparatus
HORII SADAYOSHI3 citations60
US8685866B2Apr 1, 2014
Method of manufacturing semiconductor device and substrate processing apparatus
HORII SADAYOSHI1 citations50
US8580671B2Nov 12, 2013
Method of manufacturing semiconductor device and substrate processing apparatus
HORII SADAYOSHI1 citations46
US8193083B2Jun 5, 2012
Method of manufacturing semiconductor device and substrate processing apparatus
HORII SADAYOSHI1 citations46
KOKUSAI ELECTRIC CORP
4 patentsUS11869764B2Jan 9, 2024
Substrate processing apparatus, substrate processing method and non-transitory computer-readable recording medium
KOKUSAI ELECTRIC CORP1 citations73
US12368043B2Jul 22, 2025
Substrate processing apparatus, processing method, and non-transitory computer-readable recording medium
KOKUSAI ELECTRIC CORP0 citations62
US11168396B2Nov 9, 2021
Method of manufacturing semiconductor device and recording medium
KOKUSAI ELECTRIC CORP0 citations61
US10985017B2Apr 20, 2021
Method of manufacturing semiconductor device and non-transitory computer-readable recording medium
KOKUSAI ELECTRIC CORP1 citations61