Inventor
NAKAYAMA TOKUYUKI
JP39 patents
⚠️ This page may combine multiple inventors who share the name “NAKAYAMA TOKUYUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SUMITOMO METAL MINING CO
25 patentsUS7641818B2Jan 5, 2010
Ga-In-O amorphous oxide transparent conductive film, and transparent conductive base material comprising this conductive film formed thereon
SUMITOMO METAL MINING CO18 citations92
US7611646B2Nov 3, 2009
Oxide sintered body and an oxide film obtained by using it, and a transparent base material containing it
SUMITOMO METAL MINING CO16 citations92
US7563514B2Jul 21, 2009
Transparent conductive film and transparent conductive base material utilizing the same
SUMITOMO METAL MINING CO20 citations92
US7476343B2Jan 13, 2009
Sintered body target for transparent conductive film fabrication, transparent conductive film fabricated by using the same, and transparent conductive base material comprising this conductive film formed thereon
SUMITOMO METAL MINING CO19 citations92
US7239464B2Jul 3, 2007
Absorption type multi-layer film ND filter
SUMITOMO METAL MINING CO10 citations83
US7153453B2Dec 26, 2006
Oxide sintered body, sputtering target, transparent conductive thin film and manufacturing method therefor
SUMITOMO METAL MINING CO17 citations83
US9299791B2Mar 29, 2016
Oxide semiconductor thin film and thin film transistor
SUMITOMO METAL MINING CO4 citations73
US7666527B2Feb 23, 2010
Absorption type multi-layer film ND filter
SUMITOMO METAL MINING CO6 citations73
US7976738B2Jul 12, 2011
Oxide sintered body comprising zinc oxide phase and zinc stannate compound phase
SUMITOMO METAL MINING CO6 citations72
US10000842B2Jun 19, 2018
Oxide sintered body, sputtering target, and oxide semiconductor thin film obtained using sputtering target
SUMITOMO METAL MINING CO2 citations71
US9941415B2Apr 10, 2018
Oxide sintered body, sputtering target, and oxide semiconductor thin film obtained using sputtering target
SUMITOMO METAL MINING CO3 citations71
US9670578B2Jun 6, 2017
Oxide sintered body, sputtering target, and oxide semiconductor thin film obtained using sputtering target
SUMITOMO METAL MINING CO2 citations71
US7998603B2Aug 16, 2011
Transparent conductive film, sintered body target for transparent conductive film fabrication, and transparent conductive base material and display device using the same
SUMITOMO METAL MINING CO3 citations63
US7960033B2Jun 14, 2011
Transparent conductive film, sintered body target for transparent conductive film fabrication, and transparent conductive base material and display device using the same
SUMITOMO METAL MINING CO3 citations63
US8349220B2Jan 8, 2013
Oxide sintered body, manufacturing method therefor, manufacturing method for transparent conductive film using the same, and resultant transparent conductive film
SUMITOMO METAL MINING CO3 citations61
US9721770B2Aug 1, 2017
Oxide sintered body, production method therefor, target, and transparent conductive film
SUMITOMO METAL MINING CO0 citations52
US9368639B2Jun 14, 2016
Oxide semiconductor thin film, production method thereof, and thin film transistor
SUMITOMO METAL MINING CO0 citations52
US8801973B2Aug 12, 2014
Oxide sintered body and production method therefor, target, and transparent conductive film and transparent conductive substrate obtained by using the same
SUMITOMO METAL MINING CO0 citations52
US8728635B2May 20, 2014
Oxide sintered body, target, transparent conductive film obtained by using the same, and transparent conductive substrate
SUMITOMO METAL MINING CO1 citations52
US10128108B2Nov 13, 2018
Oxide sintered body, sputtering target, and oxide semiconductor thin film obtained using sputtering target
SUMITOMO METAL MINING CO1 citations50
US9768316B2Sep 19, 2017
Oxide semiconductor thin film and thin film transistor
SUMITOMO METAL MINING CO0 citations50
US9732004B2Aug 15, 2017
Oxide sintered body, sputtering target, and oxide semiconductor thin film obtained using sputtering target
SUMITOMO METAL MINING CO0 citations50
US9688580B2Jun 27, 2017
Oxide sintered body, sputtering target, and oxide semiconductor thin film obtained using sputtering target
SUMITOMO METAL MINING CO0 citations50
US9543447B2Jan 10, 2017
Oxynitride semiconductor thin film
SUMITOMO METAL MINING CO0 citations50
US9670577B2Jun 6, 2017
Oxide sintered body, sputtering target, and oxide semiconductor thin film obtained using sputtering target
SUMITOMO METAL MINING CO0 citations39
NAKAYAMA TOKUYUKI
10 patentsUS8728615B2May 20, 2014
Transparent conductive film and method of fabricating the same, transparent conductive base material, and light-emitting device
NAKAYAMA TOKUYUKI4 citations73
US8080182B2Dec 20, 2011
Oxide sintered body and an oxide film obtained by using it, and a transparent base material containing it
NAKAYAMA TOKUYUKI6 citations73
US9028721B2May 12, 2015
Oxide sintered body, production method therefor, target, and transparent conductive film
NAKAYAMA TOKUYUKI2 citations62
US9005487B2Apr 14, 2015
Tablet for ion plating, production method therefor and transparent conductive film
NAKAYAMA TOKUYUKI2 citations62
US8440115B2May 14, 2013
Oxide sintered body and production method therefor, target, and transparent conductive film and transparent conductive substrate obtained by using the same
NAKAYAMA TOKUYUKI4 citations62
US8389135B2Mar 5, 2013
Oxide sintered body, target, transparent conductive film obtained by using the same, and transparent conductive substrate
NAKAYAMA TOKUYUKI2 citations62
US8222667B2Jul 17, 2012
Semiconductor light-emitting element, method for manufacturing the semiconductor light-emitting element and lamp that uses the semiconductor light-emitting element
NAKAYAMA TOKUYUKI2 citations62
US8633046B2Jan 21, 2014
Manufacturing method for semiconductor light-emitting element
NAKAYAMA TOKUYUKI0 citations52
US9493869B2Nov 15, 2016
Transparent conductive film
NAKAYAMA TOKUYUKI0 citations51
US9340867B2May 17, 2016
Oxide sintered body and tablets obtained by processing same
NAKAYAMA TOKUYUKI0 citations51