Inventor
WEI LIQIONG
US17 patents
⚠️ This page may combine multiple inventors who share the name “WEI LIQIONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTEL CORP
14 patentsUS7120804B2Oct 10, 2006
Method and apparatus for reducing power consumption through dynamic control of supply voltage and body bias including maintaining a substantially constant operating frequency
INTEL CORP47 citations92
US6862207B2Mar 1, 2005
Static random access memory
INTEL CORP21 citations92
US9286976B2Mar 15, 2016
Apparatuses and methods for detecting write completion for resistive memory
INTEL CORP7 citations81
US6992405B2Jan 31, 2006
Dynamic voltage scaling scheme for an on-die voltage differentiator design
INTEL CORP9 citations73
US6621726B2Sep 16, 2003
Biasing technique for a high density SRAM
INTEL CORP7 citations73
US9875783B2Jan 23, 2018
High voltage tolerant word-line driver
INTEL CORP2 citations72
US9865322B2Jan 9, 2018
Low resistance bitline and sourceline apparatus for improving read and write operations of a nonvolatile memory
INTEL CORP4 citations72
US9281043B1Mar 8, 2016
Resistive memory write circuitry with bit line drive strength based on storage cell line resistance
INTEL CORP2 citations62
US6982500B2Jan 3, 2006
Power-down scheme for an on-die voltage differentiator design
INTEL CORP2 citations62
US6407589B1Jun 18, 2002
Device for current sensing in an amplifier with PMOS voltage conversion
INTEL CORP6 citations62
US11024356B2Jun 1, 2021
Apparatus for low power write and read operations for resistive memory
INTEL CORP0 citations61
US10068628B2Sep 4, 2018
Apparatus for low power write and read operations for resistive memory
INTEL CORP1 citations61
US10438640B2Oct 8, 2019
Apparatus for low power write and read operations for resistive memory
INTEL CORP0 citations51
US9922691B2Mar 20, 2018
Resistive memory write circuitry with bit line drive strength based on storage cell line resistance
INTEL CORP1 citations51