Inventor

OHTA KAZUNOBU

JP19 patents

⚠️ This page may combine multiple inventors who share the name “OHTA KAZUNOBU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

OHTA KAZUNOBU

RENESAS ELECTRONICS CORP

Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same

Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same

Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same

Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same

Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same

Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same

Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same

Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same

Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same

RENESAS TECH CORP

Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same

Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same

Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same

Semiconductor device and manufacturing method thereof

Manufacturing method of semiconductor device

Method of manufacturing semiconductor device having gate electrode with expanded upper portion

Method of manufacturing semiconductor device

Manufacturing method for a semiconductor device

MITSUBISHI ELECTRIC CORP

Semiconductor device and manufacturing method thereof

OHTA KAZUNOBU

Solid-state imaging device having a vertical transistor with a dual polysilicon gate