Inventor

SUGIHARA KOUHEI

JP14 patents

⚠️ This page may combine multiple inventors who share the name “SUGIHARA KOUHEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

RENESAS ELECTRONICS CORP

9 patents

US8372747B2Feb 12, 2013

Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same

RENESAS ELECTRONICS CORP8 citations92

US7960281B2Jun 14, 2011

Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same

RENESAS ELECTRONICS CORP15 citations92

US9614081B2Apr 4, 2017

Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same

RENESAS ELECTRONICS CORP3 citations84

US9412867B2Aug 9, 2016

Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same

RENESAS ELECTRONICS CORP3 citations84

US9209191B2Dec 8, 2015

Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same

RENESAS ELECTRONICS CORP5 citations84

US8809186B2Aug 19, 2014

Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same

RENESAS ELECTRONICS CORP6 citations84

US8586475B2Nov 19, 2013

Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same

RENESAS ELECTRONICS CORP7 citations84

US12198987B2Jan 14, 2025

Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same

RENESAS ELECTRONICS CORP0 citations62

US9847417B2Dec 19, 2017

Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same

RENESAS ELECTRONICS CORP0 citations52

RENESAS TECH CORP

5 patents

US6906393B2Jun 14, 2005

Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same

RENESAS TECH CORP56 citations97

US7470618B2Dec 30, 2008

Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same

RENESAS TECH CORP29 citations96

US7183204B2Feb 27, 2007

Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same

RENESAS TECH CORP24 citations96

US6872642B2Mar 29, 2005

Manufacturing method of semiconductor device

RENESAS TECH CORP23 citations92

US6835610B2Dec 28, 2004

Method of manufacturing semiconductor device having gate electrode with expanded upper portion

RENESAS TECH CORP8 citations74