Inventor
REN CHI
CN34 patents
⚠️ This page may combine multiple inventors who share the name “REN CHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITED MICROELECTRONICS CORP
29 patentsUS11056495B2Jul 6, 2021
Structure of memory device having floating gate with protruding structure
UNITED MICROELECTRONICS CORP8 citations82
US12040369B2Jul 16, 2024
Semiconductor memory device and fabrication method thereof
UNITED MICROELECTRONICS CORP3 citations74
US10868197B1Dec 15, 2020
Structure of memory device and fabrication method thereof
UNITED MICROELECTRONICS CORP4 citations73
US9431256B2Aug 30, 2016
Semiconductor device and manufacturing method thereof
UNITED MICROELECTRONICS CORP5 citations73
US9837425B2Dec 5, 2017
Semiconductor device with split gate flash memory cell structure and method of manufacturing the same
UNITED MICROELECTRONICS CORP3 citations72
US8921913B1Dec 30, 2014
Floating gate forming process
UNITED MICROELECTRONICS CORP4 citations72
US11765893B2Sep 19, 2023
Structure of memory device having floating gate with protruding structure
UNITED MICROELECTRONICS CORP1 citations71
US10784185B2Sep 22, 2020
Method for manufacturing semiconductor device with through silicon via structure
UNITED MICROELECTRONICS CORP4 citations68
US10546801B2Jan 28, 2020
Semiconductor device with through silicon via structure and method for manufacturing the same
UNITED MICROELECTRONICS CORP1 citations68
US9472562B1Oct 18, 2016
Semiconductor device and method for fabricating the same
UNITED MICROELECTRONICS CORP4 citations66
US12527036B2Jan 13, 2026
Semiconductor memory device and fabrication method thereof
UNITED MICROELECTRONICS CORP0 citations62
US12414294B2Sep 9, 2025
Memory device
UNITED MICROELECTRONICS CORP0 citations62
US12057481B2Aug 6, 2024
Method for forming semiconductor memory device having a t-shaped erase gate
UNITED MICROELECTRONICS CORP0 citations62
US11882699B2Jan 23, 2024
Silicon-oxide-nitride-oxide-silicon (SONOS) memory cell for FINFET and forming method thereof
UNITED MICROELECTRONICS CORP0 citations62
US11856771B2Dec 26, 2023
Method of forming silicon-oxide-nitride-oxide-silicon (SONOS) memory cell for FinFET
UNITED MICROELECTRONICS CORP0 citations62
US11699730B2Jul 11, 2023
Semiconductor memory device and fabrication method thereof
UNITED MICROELECTRONICS CORP0 citations62
US12249658B2Mar 11, 2025
Semiconductor memory device and fabrication method thereof
UNITED MICROELECTRONICS CORP0 citations61
US11955565B2Apr 9, 2024
Semiconductor memory device and fabrication method thereof
UNITED MICROELECTRONICS CORP0 citations61
US11690220B2Jun 27, 2023
Flash and fabricating method of the same
UNITED MICROELECTRONICS CORP0 citations61
US11424258B2Aug 23, 2022
Flash and fabricating method of the same
UNITED MICROELECTRONICS CORP0 citations61
US12283557B2Apr 22, 2025
Integrated circuit structure
UNITED MICROELECTRONICS CORP0 citations60
US12185532B2Dec 31, 2024
Structure of memory device having floating gate with protruding structure
UNITED MICROELECTRONICS CORP0 citations60
US11901318B2Feb 13, 2024
Integrated circuit structure and fabrication method thereof
UNITED MICROELECTRONICS CORP1 citations60
US11100995B2Aug 24, 2021
Structure of a nonvolatile memory device with a low-voltage transistor fabricated on a substrate
UNITED MICROELECTRONICS CORP0 citations60
US11081427B2Aug 3, 2021
Semiconductor device with through silicon via structure
UNITED MICROELECTRONICS CORP0 citations58
US12484218B2Nov 25, 2025
Electrically erasable programmable read only memory cell and forming method thereof
UNITED MICROELECTRONICS CORP0 citations55
US9117847B2Aug 25, 2015
Method for fabricating semiconductor device
UNITED MICROELECTRONICS CORP0 citations51
US11943920B2Mar 26, 2024
Split gate memory with control gate having nonplanar top surface
UNITED MICROELECTRONICS CORP0 citations50
US10825522B2Nov 3, 2020
Method for fabricating low and high/medium voltage transistors on substrate
UNITED MICROELECTRONICS CORP0 citations50