Inventor
LEE SOO MIN
KR72 patents
⚠️ This page may combine multiple inventors who share the name “LEE SOO MIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
KOREA ELECTRONICS TELECOMM
15 patentsUS6124614ASep 26, 2000
Si/SiGe MOSFET and method for fabricating the same
KOREA ELECTRONICS TELECOMM47 citations96
US6337494B1Jan 8, 2002
Super self-aligned bipolar transistor and method for fabricating thereof
KOREA ELECTRONICS TELECOMM53 citations92
US6190984B1Feb 20, 2001
Method for fabricating of super self-aligned bipolar transistor
KOREA ELECTRONICS TELECOMM24 citations92
US5981345ANov 9, 1999
Si/SiGe MOSFET and method for fabricating the same
KOREA ELECTRONICS TELECOMM42 citations92
US5962879AOct 5, 1999
Super self-aligned bipolar transistor
KOREA ELECTRONICS TELECOMM30 citations92
US5897359AApr 27, 1999
Method of manufacturing a silicon/silicon germanium heterojunction bipolar transistor
KOREA ELECTRONICS TELECOMM41 citations92
US5798277AAug 25, 1998
Method for fabricating heterojunction bipolar transistor
KOREA ELECTRONICS TELECOMM39 citations92
US5696007ADec 9, 1997
Method for manufacturing a super self-aligned bipolar transistor
KOREA ELECTRONICS TELECOMM25 citations92
US5668022ASep 16, 1997
Silicon-silicon-germanium heterojunction bipolar transistor fabrication method
KOREA ELECTRONICS TELECOMM40 citations92
US5496745AMar 5, 1996
Method for making bipolar transistor having an enhanced trench isolation
KOREA ELECTRONICS TELECOMM43 citations92
US5484737AJan 16, 1996
Method for fabricating bipolar transistor
KOREA ELECTRONICS TELECOMM23 citations92
US5459084AOct 17, 1995
Method for fabricating hetero-junction bipolar transistor having reduced base parasitic resistance
KOREA ELECTRONICS TELECOMM24 citations92
US5696020ADec 9, 1997
Method for fabricating semiconductor device isolation region using a trench mask
KOREA ELECTRONICS TELECOMM14 citations73
US5444014AAug 22, 1995
Method for fabricating semiconductor device
KOREA ELECTRONICS TELECOMM13 citations73
US5874347AFeb 23, 1999
Method for fabricating field oxide isolation region for semiconductor devices
KOREA ELECTRONICS TELECOMM3 citations62
SAMSUNG ELECTRO MECH
7 patentsUS6893889B2May 17, 2005
Method for manufacturing gallium nitride-based semiconductor light emitting device
SAMSUNG ELECTRO MECH21 citations93
US7135716B2Nov 14, 2006
Gallium nitride-based semiconductor light-emitting device
SAMSUNG ELECTRO MECH11 citations84
US7645688B2Jan 12, 2010
Method of growing non-polar m-plane nitride semiconductor
SAMSUNG ELECTRO MECH12 citations82
US6914262B2Jul 5, 2005
White light emitting diode and method for manufacturing the same
SAMSUNG ELECTRO MECH6 citations73
US7569461B2Aug 4, 2009
Method of fabricating nitride-based compound layer, GaN substrate and vertical structure nitride-based semiconductor light emitting device
SAMSUNG ELECTRO MECH6 citations72
US7018912B2Mar 28, 2006
Fabrication method of nitride semiconductors and nitride semiconductor structure fabricated thereby
SAMSUNG ELECTRO MECH4 citations63
US7091055B2Aug 15, 2006
White light emitting diode and method for manufacturing the same
SAMSUNG ELECTRO MECH4 citations62
LG CHEMICAL LTD
7 patentsUS9279052B2Mar 8, 2016
Thermoplastic polyester elastomer resin composition and molding articles comprising the same
LG CHEMICAL LTD7 citations80
US9856420B2Jan 2, 2018
Polyolefin-based flame retardant resin composition and molded product
LG CHEMICAL LTD2 citations73
US9631091B2Apr 25, 2017
Poly (arylene ether) flame retardant resin composition and non-crosslinked flame retardant cable
LG CHEMICAL LTD2 citations71
US11535734B2Dec 27, 2022
Joining material for laser welding and laser welding method using the same
LG CHEMICAL LTD0 citations59
US10301503B2May 28, 2019
Poly(arylene ether) resin composition and cable coated with the same
LG CHEMICAL LTD1 citations59
US12522554B2Jan 13, 2026
Method for preparing intermediate for synthesis of sphingosine-1-phosphate receptor agonist
LG CHEMICAL LTD0 citations58
US12065564B2Aug 20, 2024
Polyester-based resin composition and molded article manufactured using the same
LG CHEMICAL LTD0 citations54
ASB INC
4 patentsUS6462397B2Oct 8, 2002
Bipolar junction device
ASB INC21 citations92
US6362066B1Mar 26, 2002
Method for manufacturing bipolar devices
ASB INC40 citations92
US6552374B2Apr 22, 2003
Method of manufacturing bipolar device and structure thereof
ASB INC8 citations73
US6562688B2May 13, 2003
Method of manufacturing a bipolar device
ASB INC2 citations62
SK CHEMICALS CO LTD
4 patentsUS8716298B2May 6, 2014
Composition for reducing skin wrinkles including PDE5 inhibitor
SK CHEMICALS CO LTD4 citations71
US9155691B2Oct 13, 2015
Composition for reducing skin wrinkles including PDE5 inhibitor
SK CHEMICALS CO LTD3 citations60
US12594279B2Apr 7, 2026
Composition for preventing or treating TNF-α-related disease, comprising hydroflumethiazide as active ingredient
SK CHEMICALS CO LTD0 citations56
US12318360B2Jun 3, 2025
Rivastigmine patch for long-term administration
SK CHEMICALS CO LTD0 citations54
LG INNOTEK CO LTD
3 patentsUS12144116B2Nov 12, 2024
Printed circuit board
LG INNOTEK CO LTD2 citations72
US11029222B2Jun 8, 2021
Pressure sensor having conductive material extending between non-porous and porous regions and pressure sensing device comprising same
LG INNOTEK CO LTD2 citations71
US12471213B2Nov 11, 2025
Circuit board
LG INNOTEK CO LTD1 citations63
SAMSUNG LED CO LTD
2 patentsKOREA SENSOR LAB CO LTD
1 patentSAMSUNG ELECTRONICS CO LTD
1 patentKIM CHEOL KYU
1 patentHYUNDAI MOTOR CO LTD
1 patentHYUNDAI MOBIS CO LTD
1 patentSAMSUNG DISPLAY DEVICES CO LTD
1 patentLEE SOO MIN
1 patentCHUNG HUN JAE
1 patentShowing the top 50 of 72 patents by PatentIndex Score.