P

Inventor

LEVI AMITAY

US63 patents
⚠️ This page may combine multiple inventors who share the name “LEVI AMITAY”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SPIN MEMORY INC

17 patents
US10355045B1Jul 16, 2019

Three dimensional perpendicular magnetic junction with thin-film transistor

SPIN MEMORY INC9 citations84
US10679685B2Jun 9, 2020

Shared bit line array architecture for magnetoresistive memory

SPIN MEMORY INC8 citations82
US10957370B1Mar 23, 2021

Integration of epitaxially grown channel selector with two terminal resistive switching memory element

SPIN MEMORY INC4 citations73
US10937479B1Mar 2, 2021

Integration of epitaxially grown channel selector with MRAM device

SPIN MEMORY INC5 citations73
US10658425B2May 19, 2020

Methods of forming perpendicular magnetic tunnel junction memory cells having vertical channels

SPIN MEMORY INC5 citations73
US10629649B2Apr 21, 2020

Method of making a three dimensional perpendicular magnetic tunnel junction with thin-film transistor

SPIN MEMORY INC3 citations73
US10497415B2Dec 3, 2019

Dual gate memory devices

SPIN MEMORY INC2 citations73
US10468293B2Nov 5, 2019

Methods of forming perpendicular magnetic tunnel junction memory cells having vertical channels

SPIN MEMORY INC5 citations73
US10438999B2Oct 8, 2019

Annular vertical Si etched channel MOS devices

SPIN MEMORY INC2 citations73
US10355047B1Jul 16, 2019

Fabrication methods of forming annular vertical SI etched channel MOS devices

SPIN MEMORY INC2 citations73
US10333063B1Jun 25, 2019

Fabrication of a perpendicular magnetic tunnel junction (PMTJ) using block copolymers

SPIN MEMORY INC6 citations73
US10319424B1Jun 11, 2019

Adjustable current selectors

SPIN MEMORY INC2 citations73
US10460778B2Oct 29, 2019

Perpendicular magnetic tunnel junction memory cells having shared source contacts

SPIN MEMORY INC2 citations72
US10355046B1Jul 16, 2019

Steep slope field-effect transistor (FET) for a perpendicular magnetic tunnel junction (PMTJ)

SPIN MEMORY INC1 citations63
US10243021B1Mar 26, 2019

Steep slope field-effect transistor (FET) for a perpendicular magnetic tunnel junction (PMTJ)

SPIN MEMORY INC1 citations63
US10431628B2Oct 1, 2019

Dual channel/gate vertical field-effect transistor (FET) for use with a perpendicular magnetic tunnel junction (PMTJ)

SPIN MEMORY INC1 citations62
US10347822B1Jul 9, 2019

Fabrication methods of forming cylindrical vertical SI etched channel 3D switching devices

SPIN MEMORY INC1 citations62

SILICON STORAGE TECH INC

16 patents
US7868375B2Jan 11, 2011

Split gate non-volatile flash memory cell having a floating gate, control gate, select gate and an erase gate with an overhang over the floating gate, array and method of manufacturing

SILICON STORAGE TECH INC230 citations98
US7927994B1Apr 19, 2011

Split gate non-volatile flash memory cell having a floating gate, control gate, select gate and an erase gate with an overhang over the floating gate, array and method of manufacturing

SILICON STORAGE TECH INC73 citations97
US7315056B2Jan 1, 2008

Semiconductor memory array of floating gate memory cells with program/erase and select gates

SILICON STORAGE TECH INC106 citations97
US7149110B2Dec 12, 2006

Seek window verify program system and method for a multilevel non-volatile memory integrated circuit system

SILICON STORAGE TECH INC54 citations96
US6855980B2Feb 15, 2005

Semiconductor memory array of floating gate memory cells with low resistance source regions and high source coupling

SILICON STORAGE TECH INC35 citations93
US6727545B2Apr 27, 2004

Semiconductor memory array of floating gate memory cells with low resistance source regions and high source coupling

SILICON STORAGE TECH INC36 citations93
US6566706B1May 20, 2003

Semiconductor array of floating gate memory cells and strap regions

SILICON STORAGE TECH INC13 citations84
US7829404B2Nov 9, 2010

Method of making a semiconductor memory array of floating gate memory cells with program/erase and select gates

SILICON STORAGE TECH INC8 citations83
US7227217B2Jun 5, 2007

Nonvolatile memory cell having floating gate, control gate and separate erase gate, an array of such memory cells, and method of manufacturing

SILICON STORAGE TECH INC12 citations83
US7084453B2Aug 1, 2006

Method of forming different oxide thickness for high voltage transistor and memory cell tunnel dielectric

SILICON STORAGE TECH INC7 citations74
US8384147B2Feb 26, 2013

High endurance non-volatile memory cell and array

SILICON STORAGE TECH INC6 citations73
US7851846B2Dec 14, 2010

Non-volatile memory cell with buried select gate, and method of making same

SILICON STORAGE TECH INC5 citations63
US6773974B2Aug 10, 2004

Method of forming a semiconductor array of floating gate memory cells and strap regions

SILICON STORAGE TECH INC3 citations63
US7816723B2Oct 19, 2010

Semiconductor memory array of floating gate memory cells with program/erase and select gates

SILICON STORAGE TECH INC4 citations62
US6969687B2Nov 29, 2005

Method of planarizing a semiconductor die

SILICON STORAGE TECH INC5 citations62
US6703318B1Mar 9, 2004

Method of planarizing a semiconductor die

SILICON STORAGE TECH INC2 citations62

INTEGRATED SILICON SOLUTION CAYMAN INC

8 patents

SPIN TRANSFER TECH

4 patents

SPIN TRANSFER TECH INC

2 patents

DO NHAN

1 patent

LEVI AMITAY

1 patent

KOTOV ALEXANDER

1 patent

Showing the top 50 of 63 patents by PatentIndex Score.