Inventor
CARMAN ERIC S
US20 patents
⚠️ This page may combine multiple inventors who share the name “CARMAN ERIC S”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
18 patentsUS9799388B1Oct 24, 2017
Charge sharing between memory cell plates using a conductive path
MICRON TECHNOLOGY INC19 citations92
US9711213B2Jul 18, 2017
Operational signals generated from capacitive stored charge
MICRON TECHNOLOGY INC7 citations84
US10127963B2Nov 13, 2018
Charge sharing between memory cell plates using a conductive path
MICRON TECHNOLOGY INC5 citations83
US11778806B2Oct 3, 2023
Memory device having 2-transistor vertical memory cell and separate read and write gates
MICRON TECHNOLOGY INC2 citations73
US11616073B1Mar 28, 2023
Memory device having 2-transistor vertical memory cell and wrapped data line structure
MICRON TECHNOLOGY INC3 citations73
US10803937B2Oct 13, 2020
Operational signals generated from capacitive stored charge
MICRON TECHNOLOGY INC1 citations73
US10424371B2Sep 24, 2019
Operational signals generated from capacitive stored charge
MICRON TECHNOLOGY INC1 citations73
US9934837B2Apr 3, 2018
Ground reference scheme for a memory cell
MICRON TECHNOLOGY INC2 citations73
US11950426B2Apr 2, 2024
Memory device having 2-transistor vertical memory cell and wrapped data line structure
MICRON TECHNOLOGY INC1 citations62
US11854598B2Dec 26, 2023
Self refresh of memory cell
MICRON TECHNOLOGY INC0 citations62
US11854615B2Dec 26, 2023
Stored charge use in cross-point memory
MICRON TECHNOLOGY INC0 citations62
US11501818B1Nov 15, 2022
Self refresh of memory cell
MICRON TECHNOLOGY INC0 citations62
US11361806B2Jun 14, 2022
Charge sharing between memory cell plates
MICRON TECHNOLOGY INC0 citations62
US12219750B2Feb 4, 2025
Memory device having 2-transistor vertical memory cell and separate read and write gates
MICRON TECHNOLOGY INC0 citations60
US10978126B2Apr 13, 2021
Ground reference scheme for a memory cell
MICRON TECHNOLOGY INC0 citations59
US10163482B2Dec 25, 2018
Ground reference scheme for a memory cell
MICRON TECHNOLOGY INC0 citations52
US10796742B2Oct 6, 2020
Charge sharing between memory cell plates
MICRON TECHNOLOGY INC0 citations51
US10395714B2Aug 27, 2019
Charge sharing between memory cell plates using a conductive path
MICRON TECHNOLOGY INC0 citations51