Inventor

JAN GUENOLE

US113 patents

⚠️ This page may combine multiple inventors who share the name “JAN GUENOLE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

JAN GUENOLE

HEADWAY TECH INC

Seed layer for multilayer magnetic materials

Method of making a high thermal stability reference structure with out-of-plane anisotropy for magnetic device applications

Magnetic element with perpendicular magnetic anisotropy for high coercivity after high temperature annealing

Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy

MgO insertion into free layer for magnetic memory applications

High thermal stability reference structure with out-of-plane anisotropy for magnetic device applications

MgO insertion into free layer for magnetic memory applications

Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications

Implementation of a one time programmable memory using a MRAM stack design

Multilayer structure for reducing film roughness in magnetic devices

Seed layer for growth of &lt;111&gt; magnetic materials

Adaptive reference scheme for magnetic memory applications

Ion beam etching process design to minimize sidewall re-deposition

Cooling for PMA (perpendicular magnetic anisotropy) enhancement of STT-MRAM (spin torque transfer-magnetic random access memory) devices

TAIWAN SEMICONDUCTOR MFG CO LTD

Dual magnetic tunnel junction devices for magnetic random access memory (MRAM)

Nitride capping layer for spin torque transfer (STT) magnetoresistive random access memory (MRAM)

Magnetic layer for magnetic random access memory (MRAM) by moment enhancement

Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM

Dual magnetic tunnel junction (DMTJ) stack design

Nitride capping layer for spin torque transfer (STT)-magnetoresistive random access memory (MRAM)

Monolayer-by-monolayer growth of MgO layers using Mg sublimation and oxidation

Magnetic layer for magnetic random access memory (MRAM) by moment enhancement

Perpendicularly magnetized ferromagnetic layers having an oxide interface allowing for improved control of oxidation

Protective passivation layer for magnetic tunnel junctions

Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions

Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions

Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications

Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions

JAN GUENOLE

Magnetic element with improved out-of-plane anisotropy for spintronic applications

Multilayers having reduced perpendicular demagnetizing field using moment dilution for spintronic applications

Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications

Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications

Multilayers having reduced perpendicular demagnetizing field using moment dilution for spintronic applications

Engineered magnetic layer with improved perpendicular anisotropy using glassing agents for spintronic applications

Engineered magnetic layer with improved perpendicular anisotropy using glassing agents for spintronic applications

HEADWAY TECHNOLOGIES INC

Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications

Co/X and CoX multilayers with improved out-of-plane anisotropy for magnetic device applications

Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications

Free layer with out-of-plane anisotropy for magnetic device applications

Fully compensated synthetic antiferromagnet for spintronics applications

Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications

Adaptive reference scheme for magnetic memory applications

WANG YU-JEN

Free layer with high thermal stability for magnetic device applications by insertion of a boron dusting layer

High thermal stability free layer with high out-of-plane anisotropy for magnetic device applications

High thermal stability reference structure with out-of-plane aniotropy to magnetic device applications

BEACH ROBERT

Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM

STT-MRAM reference layer having substantially reduced stray field and consisting of a single magnetic domain

HORNG CHENG T

Structure and method for enhancing interfacial perpendicular anisotropy in CoFe(B)/MgO/CoFe(B) magnetic tunnel junctions

KULA WITOLD

Storage element for STT MRAM applications

MAGIC TECHNOLOGIES INC

Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications

Seed layer for growth of <111> magnetic materials