Inventor
IWATA Jodi Mari
US27 patents
⚠️ This page may combine multiple inventors who share the name “IWATA Jodi Mari”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
16 patentsUS11417835B2Aug 16, 2022
Nitride capping layer for spin torque transfer (STT) magnetoresistive random access memory (MRAM)
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10957851B2Mar 23, 2021
Magnetic layer for magnetic random access memory (MRAM) by moment enhancement
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10665773B2May 26, 2020
Nitride capping layer for spin torque transfer (STT)-magnetoresistive random access memory (MRAM)
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10522752B1Dec 31, 2019
Magnetic layer for magnetic random access memory (MRAM) by moment enhancement
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US10439132B2Oct 8, 2019
Protective passivation layer for magnetic tunnel junctions
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10522744B2Dec 31, 2019
High thermal stability by doping of oxide capping layer for spin torque transfer (STT) magnetic random access memory (MRAM) applications
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10431736B2Oct 1, 2019
Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US12575328B2Mar 10, 2026
High thermal stability by doping of oxide capping layer for spin torque transfer (STT) magnetic random access memory (MRAM) applications
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12356865B2Jul 8, 2025
Multilayer structure for reducing film roughness in magnetic devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12213385B2Jan 28, 2025
Protective passivation layer for magnetic tunnel junctions
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12167699B2Dec 10, 2024
Magnetic layer for magnetic random access memory (MRAM) by moment enhancement
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11956971B2Apr 9, 2024
Cooling for PMA (perpendicular magnetic anisotropy) enhancement of STT-MRAM (spin-torque transfer-magnetic random access memory) devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11849646B2Dec 19, 2023
Nitride capping layer for spin torque transfer (STT) magnetoresistive random access memory (MRAM)
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11758820B2Sep 12, 2023
Protective passivation layer for magnetic tunnel junctions
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11024798B2Jun 1, 2021
Protective passivation layer for magnetic tunnel junctions
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11316098B2Apr 26, 2022
High thermal stability by doping of oxide capping layer for spin torque transfer (STT) magnetic random access memory (MRAM) applications
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
HEADWAY TECH INC
10 patentsUS10014465B1Jul 3, 2018
Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy
HEADWAY TECH INC22 citations94
US9966529B1May 8, 2018
MgO insertion into free layer for magnetic memory applications
HEADWAY TECH INC19 citations94
US10193062B2Jan 29, 2019
MgO insertion into free layer for magnetic memory applications
HEADWAY TECH INC7 citations84
US10784310B2Sep 22, 2020
Cooling for PMA (perpendicular magnetic anisotropy) enhancement of STT-MRAM (spin torque transfer-magnetic random access memory) devices
HEADWAY TECH INC2 citations73
US10115892B2Oct 30, 2018
Multilayer structure for reducing film roughness in magnetic devices
HEADWAY TECH INC2 citations73
US11264560B2Mar 1, 2022
Minimal thickness, low switching voltage magnetic free layers using an oxidation control layer and magnetic moment tuning layer for spintronic applications
HEADWAY TECH INC3 citations72
US10950782B2Mar 16, 2021
Nitride diffusion barrier structure for spintronic applications
HEADWAY TECH INC4 citations72
US12550623B2Feb 10, 2026
Nitride diffusion barrier structure for spintronic applications
HEADWAY TECH INC0 citations62
US11683994B2Jun 20, 2023
Magnetic element with perpendicular magnetic anisotropy (PMA) and improved coercivity field (Hc)/switching current ratio
HEADWAY TECH INC0 citations62
US11264566B2Mar 1, 2022
Magnetic element with perpendicular magnetic anisotropy (PMA) and improved coercivity field (Hc)/switching current ratio
HEADWAY TECH INC1 citations62