Inventor

LIU HUANLONG

US44 patents

⚠️ This page may combine multiple inventors who share the name “LIU HUANLONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LIU HUANLONG

TAIWAN SEMICONDUCTOR MFG CO LTD

Nitride capping layer for spin torque transfer (STT) magnetoresistive random access memory (MRAM)

Magnetic layer for magnetic random access memory (MRAM) by moment enhancement

Nitride capping layer for spin torque transfer (STT)-magnetoresistive random access memory (MRAM)

Magnetic layer for magnetic random access memory (MRAM) by moment enhancement

Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions

Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions

Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications

Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions

High thermal stability by doping of oxide capping layer for spin torque transfer (STT) magnetic random access memory (MRAM) applications

Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy

Initialization process for magnetic random access memory (MRAM) production

Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy

Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications

Electrical testing apparatus for spintronics devices

Fully compensated synthetic ferromagnet for spintronics applications

Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications

Electrical testing apparatus for spintronics devices

Method and circuits for programming STT-MRAM cells for reducing back-hopping

Methods and circuits for programming STT-MRAM cells for reducing back-hopping

Electrical testing apparatus for spintronics devices

High thermal stability by doping of oxide capping layer for spin torque transfer (STT) magnetic random access memory (MRAM) applications

Multilayer structure for reducing film roughness in magnetic devices

Magnetic layer for magnetic random access memory (MRAM) by moment enhancement

Cooling for PMA (perpendicular magnetic anisotropy) enhancement of STT-MRAM (spin-torque transfer-magnetic random access memory) devices

Nitride capping layer for spin torque transfer (STT) magnetoresistive random access memory (MRAM)

Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anistropy

Initialization process for magnetic random access memory (MRAM) production

Method for forming a perpendicular spin torque oscillator (PSTO) including forming a magneto resistive sensor (MR) over a spin torque oscillator (STO)

HEADWAY TECH INC

Magnetic element with perpendicular magnetic anisotropy for high coercivity after high temperature annealing

Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy

Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications

Implementation of a one time programmable memory using a MRAM stack design

Multilayer structure for reducing film roughness in magnetic devices

Seed layer for growth of &lt;111&gt; magnetic materials

Cooling for PMA (perpendicular magnetic anisotropy) enhancement of STT-MRAM (spin torque transfer-magnetic random access memory) devices

Fully compensated synthetic ferromagnet for spintronics applications

Fully compensated synthetic ferromagnet for spintronics applications

Multilayer structure for reducing film roughness in magnetic devices

UNIV NEW YORK

Precessional reversal in orthogonal spin transfer magnetic RAM devices

Current induced spin-momentum transfer stack with dual insulating layers

Current induced spin-momentum transfer stack with dual insulating layers

Bipolar spin-transfer switching

Precessional magnetization reversal in a magnetic tunnel junction with a perpendicular polarizer

KENT ANDREW

Bipolar spin-transfer switching

Seed layer for growth of <111> magnetic materials