Inventor
LEE YUAN-JEN
US50 patents
⚠️ This page may combine multiple inventors who share the name “LEE YUAN-JEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
27 patentsUS10957851B2Mar 23, 2021
Magnetic layer for magnetic random access memory (MRAM) by moment enhancement
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10522752B1Dec 31, 2019
Magnetic layer for magnetic random access memory (MRAM) by moment enhancement
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US10763428B2Sep 1, 2020
Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10522744B2Dec 31, 2019
High thermal stability by doping of oxide capping layer for spin torque transfer (STT) magnetic random access memory (MRAM) applications
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10431736B2Oct 1, 2019
Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10325639B2Jun 18, 2019
Initialization process for magnetic random access memory (MRAM) production
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10658577B2May 19, 2020
Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US12167701B2Dec 10, 2024
Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11573270B2Feb 7, 2023
Electrical testing apparatus for spintronics devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11563170B2Jan 24, 2023
Fully compensated synthetic ferromagnet for spintronics applications
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11309489B2Apr 19, 2022
Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11054471B2Jul 6, 2021
Electrical testing apparatus for spintronics devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US10978124B2Apr 13, 2021
Method and circuits for programming STT-MRAM cells for reducing back-hopping
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US10699765B2Jun 30, 2020
Methods and circuits for programming STT-MRAM cells for reducing back-hopping
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US10509074B2Dec 17, 2019
Electrical testing apparatus for spintronics devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US12575328B2Mar 10, 2026
High thermal stability by doping of oxide capping layer for spin torque transfer (STT) magnetic random access memory (MRAM) applications
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12563975B2Feb 24, 2026
Magnetic memory device and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12356865B2Jul 8, 2025
Multilayer structure for reducing film roughness in magnetic devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12250826B2Mar 11, 2025
Integrated circuit device and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12167699B2Dec 10, 2024
Magnetic layer for magnetic random access memory (MRAM) by moment enhancement
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11956971B2Apr 9, 2024
Cooling for PMA (perpendicular magnetic anisotropy) enhancement of STT-MRAM (spin-torque transfer-magnetic random access memory) devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11569441B2Jan 31, 2023
Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anistropy
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11316098B2Apr 26, 2022
High thermal stability by doping of oxide capping layer for spin torque transfer (STT) magnetic random access memory (MRAM) applications
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US12581865B2Mar 17, 2026
Manufacturing method of package with magnetic shielding structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12431214B2Sep 30, 2025
External magnetic field detection for MRAM device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10867651B2Dec 15, 2020
Initialization process for magnetic random access memory (MRAM) production
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12381158B2Aug 5, 2025
Wafer bonding method and bonded device structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49
HEADWAY TECH INC
11 patentsUS9425387B1Aug 23, 2016
Magnetic element with perpendicular magnetic anisotropy for high coercivity after high temperature annealing
HEADWAY TECH INC59 citations97
US10014465B1Jul 3, 2018
Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy
HEADWAY TECH INC22 citations94
US9842988B2Dec 12, 2017
Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications
HEADWAY TECH INC6 citations84
US9805816B2Oct 31, 2017
Implementation of a one time programmable memory using a MRAM stack design
HEADWAY TECH INC15 citations84
US9780299B2Oct 3, 2017
Multilayer structure for reducing film roughness in magnetic devices
HEADWAY TECH INC11 citations84
US10102896B2Oct 16, 2018
Adaptive reference scheme for magnetic memory applications
HEADWAY TECH INC10 citations82
US10784310B2Sep 22, 2020
Cooling for PMA (perpendicular magnetic anisotropy) enhancement of STT-MRAM (spin torque transfer-magnetic random access memory) devices
HEADWAY TECH INC2 citations73
US10522747B2Dec 31, 2019
Fully compensated synthetic ferromagnet for spintronics applications
HEADWAY TECH INC3 citations73
US10230044B2Mar 12, 2019
Fully compensated synthetic ferromagnet for spintronics applications
HEADWAY TECH INC1 citations73
US10115892B2Oct 30, 2018
Multilayer structure for reducing film roughness in magnetic devices
HEADWAY TECH INC2 citations73
US9747965B2Aug 29, 2017
Adaptive reference scheme for magnetic memory applications
HEADWAY TECH INC5 citations71
IND TECH RES INST
11 patentsUS7515458B2Apr 7, 2009
Structure and access method for magnetic memory cell and circuit of magnetic memory
IND TECH RES INST41 citations92
US7577019B2Aug 18, 2009
Magnetic memory cell with multiple-bit in stacked structure and magnetic memory device
IND TECH RES INST15 citations84
US7420837B2Sep 2, 2008
Method for switching magnetic moment in magnetoresistive random access memory with low current
IND TECH RES INST5 citations74
US7800937B2Sep 21, 2010
Method for switching magnetic moment in magnetoresistive random access memory with low current
IND TECH RES INST2 citations63
US7577017B2Aug 18, 2009
High-bandwidth magnetoresistive random access memory devices and methods of operation thereof
IND TECH RES INST2 citations63
US7463510B2Dec 9, 2008
High-bandwidth magnetoresistive random access memory devices
IND TECH RES INST4 citations63
US7208808B2Apr 24, 2007
Magnetic random access memory with lower switching field
IND TECH RES INST4 citations63
US7539049B2May 26, 2009
Magnetic random access memory and operation method
IND TECH RES INST5 citations62
US7515462B2Apr 7, 2009
Writing method for magnetic memory cell and magnetic memory array structure
IND TECH RES INST0 citations52
US7872904B2Jan 18, 2011
Magnetic random access memory
IND TECH RES INST1 citations51
US7372724B2May 13, 2008
Method for accessing data on magnetic memory
IND TECH RES INST0 citations42