Inventor

XIE QI

BE98 patents

⚠️ This page may combine multiple inventors who share the name “XIE QI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

XIE QI

ASM IP HOLDING BV

Semiconductor structure and device formed using selective epitaxial process

System and method for gas-phase passivation of a semiconductor surface

System and method for gas-phase sulfur passivation of a semiconductor surface

Sulfur-containing thin films

Semiconductor structure and device and methods of forming same using selective epitaxial process

Method for passivating a surface of a semiconductor and related systems

Method of forming a germanium oxynitride film

Source/drain performance through conformal solid state doping

System and method for gas-phase passivation of a semiconductor surface

Reaction chamber passivation and selective deposition of metallic films

Reaction chamber passivation and selective deposition of metallic films

Reaction chamber passivation and selective deposition of metallic films

Selective deposition of aluminum and nitrogen containing material

Reaction chamber passivation and selective deposition of metallic films

Selective deposition of aluminum and nitrogen containing material

Selective deposition of aluminum and nitrogen containing material

Selective deposition of aluminum and nitrogen containing material

Selective deposition of aluminum and nitrogen containing material

Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures

Cyclic aluminum nitride deposition in a batch reactor

Method of forming structures including a vanadium or indium layer

Method for forming metal chalcogenide thin films on a semiconductor device

Method of making a wire-based semiconductor device

Sulfur-containing thin films

Method for forming source/drain contact structure with chalcogen passivation

Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film

Methods for forming a semiconductor device and related semiconductor device structures

Method of making a resistive random access memory

Method of forming vanadium nitride layer and structure including the vanadium nitride layer

Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures

Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures

Method of forming a germanium oxynitride film

Layer forming method

Sulfur-containing thin films

Metal selenide and metal telluride thin films for semiconductor device applications

Method of making a resistive random access memory device with metal-doped resistive switching layer

Method of making a wire-based semiconductor device

Method of forming vanadium nitride layer and structure including the vanadium nitride layer

Method of depositing vanadium metal

Deposition of charge trapping layers

Method for forming a semiconductor device structure comprising a gate fill metal

Method of making a resistive random access memory device

Methods for selective deposition using a sacrificial capping layer

Deposition method

Method of forming structures for threshold voltage control

Method of forming vanadium nitride-containing layer

HUAWEI TECH CO LTD

Image sharing method and electronic device

Positioning information processing method and apparatus

MACHKAOUTSAN VLADIMIR

Process for depositing electrode with high effective work function

TEMASEK LIFE SCIENCES LAB

Nac1—a plant gene encoding a transcription factor involved in cotyledon and lateral root development