Inventor
MAES JAN WILLEM
BE92 patents
⚠️ This page may combine multiple inventors who share the name “MAES JAN WILLEM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ASM IP HOLDING BV
39 patentsUS10361201B2Jul 23, 2019
Semiconductor structure and device formed using selective epitaxial process
ASM IP HOLDING BV412 citations99
US9245742B2Jan 26, 2016
Sulfur-containing thin films
ASM IP HOLDING BV476 citations99
US9240412B2Jan 19, 2016
Semiconductor structure and device and methods of forming same using selective epitaxial process
ASM IP HOLDING BV503 citations99
US10453701B2Oct 22, 2019
Deposition of organic films
ASM IP HOLDING BV55 citations98
US10367080B2Jul 30, 2019
Method of forming a germanium oxynitride film
ASM IP HOLDING BV375 citations98
US10032628B2Jul 24, 2018
Source/drain performance through conformal solid state doping
ASM IP HOLDING BV463 citations98
US9916980B1Mar 13, 2018
Method of forming a structure on a substrate
ASM IP HOLDING BV480 citations98
US8841182B1Sep 23, 2014
Silane and borane treatments for titanium carbide films
ASM IP HOLDING BV529 citations98
US10480064B2Nov 19, 2019
Reaction chamber passivation and selective deposition of metallic films
ASM IP HOLDING BV47 citations97
US10204782B2Feb 12, 2019
Combined anneal and selective deposition process
ASM IP HOLDING BV52 citations97
US10041166B2Aug 7, 2018
Reaction chamber passivation and selective deposition of metallic films
ASM IP HOLDING BV57 citations97
US9803277B1Oct 31, 2017
Reaction chamber passivation and selective deposition of metallic films
ASM IP HOLDING BV87 citations97
US10923361B2Feb 16, 2021
Deposition of organic films
ASM IP HOLDING BV19 citations94
US10847361B2Nov 24, 2020
Selective deposition of aluminum and nitrogen containing material
ASM IP HOLDING BV16 citations94
US10793946B1Oct 6, 2020
Reaction chamber passivation and selective deposition of metallic films
ASM IP HOLDING BV17 citations94
US10566185B2Feb 18, 2020
Selective deposition of aluminum and nitrogen containing material
ASM IP HOLDING BV22 citations94
US11094535B2Aug 17, 2021
Selective passivation and selective deposition
ASM IP HOLDING BV20 citations93
US10903113B2Jan 26, 2021
Selective deposition of aluminum and nitrogen containing material
ASM IP HOLDING BV16 citations93
US10553482B2Feb 4, 2020
Selective deposition of aluminum and nitrogen containing material
ASM IP HOLDING BV18 citations93
US10121699B2Nov 6, 2018
Selective deposition of aluminum and nitrogen containing material
ASM IP HOLDING BV23 citations93
US9552979B2Jan 24, 2017
Cyclic aluminum nitride deposition in a batch reactor
ASM IP HOLDING BV43 citations92
US11450529B2Sep 20, 2022
Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
ASM IP HOLDING BV9 citations85
US9711396B2Jul 18, 2017
Method for forming metal chalcogenide thin films on a semiconductor device
ASM IP HOLDING BV7 citations84
US9553148B2Jan 24, 2017
Method of making a wire-based semiconductor device
ASM IP HOLDING BV10 citations84
US9478419B2Oct 25, 2016
Sulfur-containing thin films
ASM IP HOLDING BV7 citations84
US9461134B1Oct 4, 2016
Method for forming source/drain contact structure with chalcogen passivation
ASM IP HOLDING BV12 citations84
US10643904B2May 5, 2020
Methods for forming a semiconductor device and related semiconductor device structures
ASM IP HOLDING BV19 citations83
US9520562B2Dec 13, 2016
Method of making a resistive random access memory
ASM IP HOLDING BV7 citations83
US11885014B2Jan 30, 2024
Transition metal nitride deposition method
ASM IP HOLDING BV3 citations74
US11915929B2Feb 27, 2024
Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
ASM IP HOLDING BV2 citations73
US11728175B2Aug 15, 2023
Deposition of organic films
ASM IP HOLDING BV2 citations73
US11217444B2Jan 4, 2022
Method for forming an ultraviolet radiation responsive metal oxide-containing film
ASM IP HOLDING BV2 citations73
US11101370B2Aug 24, 2021
Method of forming a germanium oxynitride film
ASM IP HOLDING BV2 citations73
US10199213B2Feb 5, 2019
Sulfur-containing thin films
ASM IP HOLDING BV2 citations73
US9741815B2Aug 22, 2017
Metal selenide and metal telluride thin films for semiconductor device applications
ASM IP HOLDING BV5 citations73
US9385164B2Jul 5, 2016
Method of making a resistive random access memory device with metal-doped resistive switching layer
ASM IP HOLDING BV4 citations73
US9012278B2Apr 21, 2015
Method of making a wire-based semiconductor device
ASM IP HOLDING BV5 citations73
US11664219B2May 30, 2023
Selective deposition of SiOC thin films
ASM IP HOLDING BV2 citations72
US11447861B2Sep 20, 2022
Sequential infiltration synthesis apparatus and a method of forming a patterned structure
ASM IP HOLDING BV4 citations72
ASM INC
3 patentsASM INT
3 patentsUS6818517B1Nov 16, 2004
Methods of depositing two or more layers on a substrate in situ
ASM INT119 citations98
US7629267B2Dec 8, 2009
High stress nitride film and method for formation thereof
ASM INT83 citations95
US7323422B2Jan 29, 2008
Dielectric layers and methods of forming the same
ASM INT8 citations74
MACHKAOUTSAN VLADIMIR
1 patentVAN NOOTEN SEBASTIAN E
1 patentASM INT NV
1 patentPIERREUX DIETER
1 patentPOMAREDE CHRISTOPHE
1 patentShowing the top 50 of 92 patents by PatentIndex Score.