Inventor

MACIEJEWSKI JOSEPH OWEN

US2 patents

Patents

2 patents

US6887736B2May 3, 2005

Method of forming a p-type group II-VI semiconductor crystal layer on a substrate

CERMET INC15 citations87

US7176054B2Feb 13, 2007

Method of forming a p-type group II-VI semiconductor crystal layer on a substrate

CERMET INC9 citations68