Inventor
HUNG HUNG
JP46 patents
⚠️ This page may combine multiple inventors who share the name “HUNG HUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
37 patentsUS11508647B2Nov 22, 2022
Semiconductor device
TOSHIBA KK2 citations72
US11264899B2Mar 1, 2022
Semiconductor device
TOSHIBA KK4 citations72
US10868163B2Dec 15, 2020
Semiconductor device
TOSHIBA KK3 citations72
US10771057B1Sep 8, 2020
Semiconductor device
TOSHIBA KK3 citations72
US9627489B2Apr 18, 2017
Semiconductor device
TOSHIBA KK2 citations72
US10707312B2Jul 7, 2020
Semiconductor device
TOSHIBA KK2 citations71
US10651276B2May 12, 2020
Semiconductor device
TOSHIBA KK6 citations71
US12328924B2Jun 10, 2025
Semiconductor device
TOSHIBA KK1 citations64
US12588573B2Mar 24, 2026
Semiconductor device
TOSHIBA KK0 citations62
US12170316B2Dec 17, 2024
Nitride semiconductor device with element isolation area
TOSHIBA KK0 citations62
US12027614B2Jul 2, 2024
Semiconductor device
TOSHIBA KK1 citations62
US11830916B2Nov 28, 2023
Nitride semiconductor device with element isolation area
TOSHIBA KK0 citations62
US10998433B2May 4, 2021
Semiconductor device
TOSHIBA KK1 citations62
US10763352B2Sep 1, 2020
Semiconductor device
TOSHIBA KK1 citations61
US12444668B2Oct 14, 2025
Semiconductor device
TOSHIBA KK0 citations52
US12362264B2Jul 15, 2025
Semiconductor device
TOSHIBA KK0 citations52
US12273101B2Apr 8, 2025
Semiconductor device
TOSHIBA KK0 citations52
US12046668B2Jul 23, 2024
Semiconductor device
TOSHIBA KK0 citations52
US12002858B2Jun 4, 2024
Semiconductor device
TOSHIBA KK0 citations52
US11948864B2Apr 2, 2024
Semiconductor device
TOSHIBA KK0 citations52
US11251298B2Feb 15, 2022
Power semiconductor device
TOSHIBA KK0 citations52
US9543146B2Jan 10, 2017
Manufacturing method of semiconductor device that includes forming plural nitride semiconductor layers of identical material
TOSHIBA KK0 citations52
US9478706B2Oct 25, 2016
Semiconductor light emitting device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer
TOSHIBA KK0 citations52
US9305773B2Apr 5, 2016
Semiconductor device, nitride semiconductor wafer, and method for forming nitride semiconductor layer
TOSHIBA KK0 citations52
US9202873B2Dec 1, 2015
Semiconductor wafer for semiconductor device having a multilayer
TOSHIBA KK1 citations52
US9123831B2Sep 1, 2015
Semiconductor device, nitride semiconductor wafer, and method for forming nitride semiconductor layer
TOSHIBA KK0 citations52
US9006706B2Apr 14, 2015
Semiconductor light emitting device
TOSHIBA KK1 citations52
US8969891B2Mar 3, 2015
Nitride semiconductor device, nitride semiconductor wafer and method for manufacturing nitride semiconductor layer
TOSHIBA KK0 citations52
US8835983B2Sep 16, 2014
Nitride semiconductor device including a doped nitride semiconductor between upper and lower nitride semiconductor layers
TOSHIBA KK0 citations52
US8759851B2Jun 24, 2014
Nitride semiconductor device, nitride semiconductor wafer and method for manufacturing nitride semiconductor layer
TOSHIBA KK0 citations52
US12062651B2Aug 13, 2024
Semiconductor device
TOSHIBA KK0 citations51
US11290100B2Mar 29, 2022
Semiconductor device
TOSHIBA KK0 citations51
US12550405B2Feb 10, 2026
Semiconductor device
TOSHIBA KK0 citations50
US9287441B2Mar 15, 2016
Method for manufacturing semiconductor device
TOSHIBA KK0 citations42
US10074739B2Sep 11, 2018
Semiconductor device having electric field near drain electrode alleviated
TOSHIBA KK0 citations41
US9887281B2Feb 6, 2018
Semiconductor device
TOSHIBA KK0 citations41
US10593793B2Mar 17, 2020
Semiconductor device
TOSHIBA KK0 citations40
SHIODA TOMONARI
3 patentsUS8785943B2Jul 22, 2014
Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer
SHIODA TOMONARI10 citations83
US8525194B2Sep 3, 2013
Nitride semiconductor device, nitride semiconductor wafer and method for manufacturing nitride semiconductor layer
SHIODA TOMONARI3 citations62
US8692287B2Apr 8, 2014
Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer
SHIODA TOMONARI0 citations41