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Inventor
WESTMEYER ANDREW
US
2 patents
Patents
2 patents
US7332439B2
Feb 19, 2008
Metal gate transistors with epitaxial source and drain regions
INTEL CORP
144 citations
96
US8344452B2
Jan 1, 2013
Metal gate transistors with raised source and drain regions formed on heavily doped substrate
INTEL CORP
4 citations
60