Inventor

NAIK MEHUL B

US51 patents

⚠️ This page may combine multiple inventors who share the name “NAIK MEHUL B”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NAIK MEHUL B

APPLIED MATERIALS INC

Damascene structure fabricated using a layer of silicon-based photoresist material

Metallization process and method

Damascene structure fabricated using a layer of silicon-based photoresist material

Enhanced cobalt agglomeration resistance and gap-fill performance by ruthenium doping

Method of forming a dual damascene structure utilizing a three layer hard mask structure

Solvent free photoresist strip and residue removal processing for post etching of low-k films

Interconnect line formed by dual damascene using dielectric layers having dissimilar etching characteristics

Integrated circuit interconnect lines having sidewall layers

Damascene structure fabricated using a layer of silicon-based photoresist material

Methods for etching a structure for semiconductor applications

Seam-healing method upon supra-atmospheric process in diffusion promoting ambient

Gap fill deposition process

Methods of forming metal silicide layers and metal silicide layers formed therefrom

Method to improve film stability

Seam-healing method upon supra-atmospheric process in diffusion promoting ambient

Integrated metal spacer and air gap interconnect

Methods for forming interconnect structure utilizing selective protection process for hardmask removal process

Process integration approach of selective tungsten via fill

Doped selective metal caps to improve copper electromigration with ruthenium liner

Methods for manufacturing an interconnect structure for semiconductor devices

Dielectric/metal barrier integration to prevent copper diffusion

Method and apparatus for protecting metal interconnect from halogen based precursors

Methods for forming interconnection structures in an integrated cluster system for semicondcutor applications

Integrated metal spacer and air gap interconnect

Process integration approach of selective tungsten via fill

Process integration method to tune resistivity of nickel silicide

Direct deposition of nickel silicide nanowire

Dielectric/metal barrier integration to prevent copper diffusion

Methods for forming passivation protection for an interconnection structure

Doped selective metal caps to improve copper electromigration with ruthenium liner

Methods for forming a metal silicide interconnection nanowire structure

Seed layers for copper interconnects

Method for critical dimension reduction using conformal carbon films

Methods for etching a dielectric barrier layer in a dual damascene structure

Adhesion and minimizing oxidation on electroless CO alloy films for integration with low K inter-metal dielectric and etch stop

Subtractive metals and subtractive metal semiconductor structures

Method of cleaning a structure and method of depositing a capping layer in a structure

Interconnection structure of selective deposition process

Enhanced cobalt agglomeration resistance and gap-fill performance by ruthenium doping

Integrated cluster to enable next generation interconnect

Air gap structure integration using a processing system

Integrated cluster to enable next generation interconnect

Process integration method to tune resistivity of nickel silicide

Method to reduce trap-induced capacitance in interconnect dielectric barrier stack

Method to reduce trap-induced capacitance in interconnect dielectric barrier stack

Interconnect integration for sidewall pore seal and via cleanliness

Silicide phase control by confinement

Metal-containing films as dielectric capping barrier for advanced interconnects

Laminate and core shell formation of silicide nanowire

NAIK MEHUL B

Process for damascene structure with reduced low-k damage